SG50N06D3S datasheet(2/2 Pages) SIRECT

Part #	SG50N06D3S

Description	Discrete IGBTs

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Manufacturer	SIRECT [Sirectifier Global Corp.]

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SG50N06D2S, SG50N06D3S

Discrete IGBTs

Symbol

Test Conditions

Unit

min.

typ.

max.

gts

IC=IC90; VCE=10V

35

50

S

Pulse test, t

300us, duty cycle

2%

Cies

4100

Coes

VCE=25V; VGE=0V; f=1MHz

290

pF

Cres

50

Qg

110

Qge

IC=IC90; VGE=15V; VCE=0.5VCES

30

nC

Qgc

35

td(on)

Inductive load, TJ=25

oC

50

ns

tri

IC=IC90; VGE=15V; L=100uH

50

ns

VCE=0.8VCES; RG=Roff=2.7

td(off)

Remarks:Switching times may increase

110

250

ns

tfi

for VCE(Clamp)

0.8VCES' higher TJ or

150

220

ns

Eoff

increased RG

3.0

4.0

mJ

td(on)

Inductive load, TJ=125

oC

50

ns

tri

IC=IC90; VGE=15V; L=100uH

60

ns

Eon

VCE=0.8VCES; RG=Roff=2.7

3.0

mJ

td(off)

Remarks:Switching times may increase

200

ns

tfi

for VCE(Clamp)

0.8VCES' higher TJ or

250

ns

Eoff

increased RG

4.2

mJ

RthJC

0.50

K/W

RthCK

0.05

K/W

(TJ=25

oC, unless otherwise specified)

Characteristic Values

Reverse Diode (FRED)

Symbol

Test Conditions

Unit

min.

typ.

max.

VF

IF=60A; TVJ=150

oC

V

Pulse test, t

300us, duty cycle d

2%; TVJ=25

oC

2.40

IRM

IF=IC90; VGE=0V; -diF/dt=100A/us; VR=540V

8.0

A

trr

IF=1A; -di/dt=50A/us; VR=30V; TJ=25

oC

ns

RthJC

0.85

K/W

Characteristic Values

(TJ=25

oC, unless otherwise specified)

IR

TVJ=25

oC; VR=VRRM

TVJ=150

oC

1.75

35

650

2.5

uA

mA

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SG50N06D3S Datasheet(PDF) 2 Page - Sirectifier Global Corp.

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