RSM5853P datasheet(4/5 Pages) SIRECT

Part #	RSM5853P

Description	P-Channel 20Volt (D-S) MOSFET With Schottky Diode

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Manufacturer	SIRECT [Sirectifier Global Corp.]

Direct Link	http://www.sirectsemi.com

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0

1

6

4

2

0

Figure 7. Gate Charge Characteristics

Qd, GATE CHARGE (nC)

10

2

3

4

5

8

ID = -3.5V

VDS = -5V

-10V

-15V

0

200

15

10

5

0

Figure 8. Capacitance Characteristics

-VDS, DRAIN TO SOURCE VOLTAGE (V)

20

400

600

800

1000

f = 1MHz

VGS = 0V

CISS

COSS

CROSS

-VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 9. Maximum Safe Operating Area

100

10

1

0.1

0.01

0.1

1

100

1ms

10

DC

1s

100µs

10m

s

100m

s

VGS = -4.5V

SINGLE PLUSE

RθJA = 156oC/W

TA = 25oC

RDS(ON) LIMIT

1

10

0

0.1

SINGLE PULSE TIME (SEC)

Figure 10. Single Pluse Maximum Power

Dissipation

SINGLE PLUSE

RθJA = 156 oC/W

TA = 25 oC

100

1

2

3

4

5

0.001

0.0001

0.01

t1, TIME (SEC)

Figure 11. Transient Thermal Response Curve

0.1

1

0.001

0.01

0.1

1

10

100

1000

PDM

t2

t1

Notes:

1.Duty factor D = t1 / t2

2.Peak Tj = PDM x ZthJC + TC

SINGLE PULSE

(THERMAL RESISTANCE)

D = 0.2

D = 0.5

D = 0.1

D = 0.05

D = 0.02

D = 0.01

RθJA(t) = r(t) + RθJA

RθJA = 156oC/W

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RSM5853P Datasheet(PDF) 4 Page - Sirectifier Global Corp.

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