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2SB1560 Datasheet(PDF) 1 Page - Sanken electric |
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2SB1560 Datasheet(HTML) 1 Page - Sanken electric |
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1 / 1 page 48 ∗hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000) Darlington 2SB1560 I C– V CE Characteristics (Typical) h FE– I C Characteristics (Typical) h FE– I C Temperature Characteristics (Typical) I C– V BE Temperature Characteristics (Typical) V CE(sat) – I B Characteristics (Typical) Pc – T a Derating 0 0 –2 –4 –6 –10 –8 –2 –4 –6 Collector-Emitter Voltage V CE(V) –2.5mA –2.0mA –1.5mA –1.0mA –1.2mA –0.8mA –0.6mA I B=–0.4mA 0 –3 –2 –1 –0.2 –1 –0.5 –10 –5 –200 –100 –50 Base Current I B(mA) –7A –10A I C=–5A 0 –10 –8 –6 –2 –4 0 –2.5 –2 –1 Base-Emittor Voltage V BE(V) (V CE=–4V) 1,000 10,000 40,000 5,000 –0.2 –0.5 –1 –5 –10 Collector Current I C(A) (V CE=–4V) Typ (V CE=–4V) –0.2 –1 –0.5 –5 –10 500 1000 5000 10000 50000 Collector Current I C(A) 125˚C 25˚C –30˚C 0.1 1 3 0.5 1 5 10 50 100 500 1000 2000 Time t(ms) 0.02 0.1 0.05 0.5 1 5 10 0 40 60 20 100 80 (V CE=–12V) Emitter Current I E(A) Typ 10ms –10 –50 –5 –3 –100 –200 –0.05 –0.1 –1 –0.5 –10 –30 –5 Collector-Emitter Voltage V CE(V) DC 100ms Without Heatsink Natural Cooling 100 50 3.5 0 0 2 5 5 0 7 5 100 125 150 Ambient Temperature Ta(˚C) Without Heatsink Safe Operating Area (Single Pulse) θj-a–t Characteristics f T– I E Characteristics (Typical) Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390) Application : Audio, Series Regulator and General Purpose Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings –160 –150 –5 –10 –1 100(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C sAbsolute maximum ratings sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fr COB Ratings –100max –100max –150min 5000min ∗ –2.5max –3.0max 50typ 230typ Unit µA µA V V V MHz pF Conditions VCB=–160V VEB=–5V IC=–30mA VCE=–4V, IC=–7A IC=–7A, IB=–7mA IC=–7A, IB=–7mA VCE=–12V, IE=2A VCB=–10V, f=1MHz (Ta=25°C) (Ta=25°C) sTypical Switching Characteristics (Common Emitter) VCC (V) –70 RL ( Ω) 10 IC (A) –7 VBB2 (V) 5 IB2 (mA) 7 ton ( µs) 0.8typ tstg ( µs) 3.0typ tf ( µs) 1.2typ IB1 (mA) –7 VBB1 (V) –10 External Dimensions MT-100(TO3P) 15.6±0.4 9.6 ø3.2±0.1 2 3 1.05 +0.2 -0.1 BE 5.45±0.1 5.45±0.1 C 4.8±0.2 0.65 +0.2 -0.1 1.4 2.0±0.1 a b Weight : Approx 6.0g a. Part No. b. Lot No. B E C (70 Ω) Equivalent circuit |
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