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K9XXG16UXM-P Datasheet(PDF) 10 Page - Samsung semiconductor

Part # K9XXG16UXM-P
Description  256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
Download  39 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K9XXG16UXM-P Datasheet(HTML) 10 Page - Samsung semiconductor

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FLASH MEMORY
10
K9W4G08U1M
K9W4G16U1M
K9K2G08U0M
K9K2G16Q0M
K9K2G08Q0M
K9K2G16U0M
1K Words
32 Words
Figure 1-2. K9K2G16X0M (X16) Functional Block Diagram
Figure 2-2. K9K2G16X0M (X16) Array Organization
NOTE : Column Address : Starting Address of the Register.
* L must be set to "Low".
* The device ignores any additional input of address cycles than reguired.
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
I/O8 ~ 15
1st Cycle
A0
A1
A2
A3
A4
A5
A6
A7
*L
2nd Cycle
A8
A9
A10
*L
*L
*L
*L
*L
*L
3rd Cycle
A11
A12
A13
A14
A15
A16
A17
A18
*L
4th Cycle
A19
A20
A21
A22
A23
A24
A25
A26
*L
5th Cycle
A27
*L
*L
*L
*L
*L
*L
*L
*L
VCC
X-Buffers
Command
I/O Buffers & Latches
Latches
& Decoders
Y-Buffers
Latches
& Decoders
Register
Control Logic
& High Voltage
Generator
Global Buffers
Output
Driver
VSS
A11 - A27
A0 - A10
Command
CE
RE
WE
CLE
WP
I/0 0
I/0 15
VCC
VSS
128K Pages
(=2,048 Blocks)
1K Words
16 bit
32 Words
1 Block = 64 Pages
(64K + 2k) Word
I/O 0 ~ I/O 15
1 Page = (1K + 32)Words
1 Block = (1K + 32)Word x 64 Pages
= (64K + 2K) Words
1 Device = (1K+32)Word x 64Pages x 2048 Blocks
= 2112 Mbits
Row Address
Page Register
ALE PRE
2048M + 64M Bit
NAND Flash
ARRAY
(1024 + 32)Word x 131072
Y-Gating
Cache Register
Row Address
Column Address
Column Address
Data Register & S/A
Row Address


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