K4C560838C-TCD3 datasheet(4/42 Pages) SAMSUNG

Part #	K4C560838C-TCD3

Description	256Mb Network-DRAM

Download	42 Pages

Scroll/Zoom	100%

Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

Logo

4 / 42 page

K4C5608/1638C

256Mb Network-DRAM

REV. 0.7 Aug. 2003

- 4 -

• Fully Synchronous Operation

Double Data Rate (DDR)

Data input/output are synchronized with both edges of DQS.

Differential Clock (CK and CK)inputs

CS, FN and all address input signals are sampled on the positive edge of CK.

Output data (DQs and DQS) is referenced to the crossings of CK and CK.

• Fast clock cycle time of 5ns minimum

Clock : 200MHz maximum

Data : 400Mbps/pin maximum

• Quad independent banks operation

• Fast cycle and short Iatency

• Bidirectional data strobe signal

• Distributed Auto-Refresh cycle in 7.8us

• Self-Refresh

• Power Down Mode

• Variable Write Length Control

• Write Latency = CAS Latency - 1

• Programmable CAS Latency and Burst Length

CAS Latency = 3, 4

Burst Length = 2, 4

• Organization K4C561638C-TC : 4,194,304 words x4 banks x 16

K4C560838C-TC : 8,388,608 words x4 banks x 8

• Power supply voltage Vdd : 2.5 ± 0.15V

VddQ : 2.5 ± 0.15V

• 2.5V CMOS I/O comply with SSTL-2 (Strong / Normal / Weaker / Weakest)

• Package 400X875mil, 66pin TSOP II, 0.65mm pin pitch (TSOP II 66-P-400-0.65)

Item

K4C560838/1638C-TC

D4 (400Mbps)

DA (366Mbps)

D3 (333Mbps)

tCK Clock Cycle Time (Min.)

CL=3

5.5ns

6ns

6.5ns

CL=4

5ns

5.5ns

6ns

tRC Random Read/Write Cycle Time (Min.)

25ns

27.5ns

30ns

tRAC Random Access Time (Max.)

22ns

24ns

26ns

IDD1S Operating Current (Single bank) (Max.)

310mA

300mA

290mA

IDD2P Power Down Current (Max.)

2mA

IDD6 Self-Refresh Current(Max.)

3mA

Key Feature

Similar Part No. - K4C560838C-TCD3

Manufacturer	Part #	Datasheet	Description
Samsung semiconductor	K4C89083AF-ACF5	1Mb / 55P	288Mb x18 Network-DRAM2 Specification
	K4C89083AF-ACF6	1Mb / 55P	288Mb x18 Network-DRAM2 Specification
	K4C89083AF-ACFB	1Mb / 55P	288Mb x18 Network-DRAM2 Specification
	K4C89083AF-AIF5	1Mb / 55P	288Mb x18 Network-DRAM2 Specification
	K4C89083AF-AIF6	1Mb / 55P	288Mb x18 Network-DRAM2 Specification

More results

Similar Description - K4C560838C-TCD3

Manufacturer	Part #	Datasheet	Description
List of Unclassifed Man...	NT5SV64M4AT	817Kb / 65P	256Mb Synchronous DRAM
Integrated Silicon Solu...	IS42S83200J	1Mb / 63P	256Mb SYNCHRONOUS DRAM
	IS42S32800G	1,009Kb / 58P	256Mb SYNCHRONOUS DRAM
	IS43DR32801B	999Kb / 44P	256Mb DDR2 DRAM
	IS43DR32800A	913Kb / 41P	256Mb DDR2 DRAM
Eorex Corporation	EM488M3244VTB	685Kb / 17P	256Mb (2M횞4Bank횞32) Synchronous DRAM
	EM488M3244VBA	203Kb / 17P	256Mb (2M쨈4Bank쨈32) Synchronous DRAM
	EM48AM1684VBB	669Kb / 17P	256Mb (4M횞4Bank횞16) Synchronous DRAM
	EM48AM1684LBA	650Kb / 17P	256Mb (4M횞4Bank횞16) Synchronous DRAM
	EM48AM1684VTE	222Kb / 19P	256Mb (4M횞4Bank횞16) Synchronous DRAM

More results

K4C560838C-TCD3 Datasheet(PDF) 4 Page - Samsung semiconductor

K4C560838C-TCD3 Datasheet(HTML) 4 Page - Samsung semiconductor

Similar Part No. - K4C560838C-TCD3

Similar Description - K4C560838C-TCD3

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42

Datasheet Download

Link URL