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S5T8554B01 Datasheet(PDF) 10 Page - Samsung semiconductor |
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S5T8554B01 Datasheet(HTML) 10 Page - Samsung semiconductor |
10 / 14 page S5T8554B/7B 1 CHIP CODEC 10 TRANSMISSION CHARACTERISTICS (Unless otherwise specified: Ta = 0 °C to 70°C, V CC = 5V ± 5%, VBB = −5V ± 5%, GNDA = 0V, f = 1.02kHz, VIN = 0dBm0, transmit input amplifier connected for unity-gain non-inverting.) Characteristic Symbol Test Conditions Min. Typ. Max. Unit Absolute Transmit Gain Variation with Temperature ∆G V(ATX) / ∆T Ta = 0 °C to 70°C − − ±0.1 dB Absolute Transmit Gain Variation with Supply Voltage ∆G V (ATX) /∆V VCC = 5V ±5%, VBB = −5V ±5% − − ±0.05 dB Transmit Gain Variations with Level − Sinusoldal test method Reference level = − 10dBm0 VFXI + = − 40dBm0 to +3dBm0 VFX + = − 50dBm0 to − 40dBm0 VFXI + = − 55dBm0 to − 50dBm0 −0.2 −0.4 −1.2 − 0.2 0.4 1.2 dB dB dB ENVELOPE DELAY DISTORTION WITH FREQUENCY Receive Delay, Absolute tD (ARX) f = 1600Hz − 180 200 µs Receive Delay, Relative to tD (ARX) tD (RRX) f = 500Hz - 1000Hz f = 1000Hz - 1600Hz f = 1600Hz - 2600Hz f = 2600Hz - 2800Hz f = 2800Hz - 3000Hz −40 −30 −25 −120 70 100 145 90 125 175 µs µs µs µs µs Transmit Delay, Absolute tD (ATX) f = 1600Hz − 290 315 µs Transmit Delay, Relative to tD (ATX) tD (RTX) f = 500Hz - 600Hz f = 600Hz - 800Hz f = 800Hz - 1000Hz f = 1000Hz - 1600Hz f = 1600Hz - 2600Hz f = 2600Hz - 2800Hz f = 2800Hz - 3000Hz − 195 120 50 20 55 80 130 220 145 75 40 75 105 155 µs µs µs µs µs µs µs NOISE Receive Noise, CMessage Weighted NRXC PCM code equals alternating positive and negative zero, S5T8554B − 8 11 dBrnc0 Receive Noise, PMessage Weighted NRXP PCM code equals, positive zero, S5T8557B − −82 −79 dBm0p Transmit Noise, CMessage Weighted NTXC S5T8554B − 12 15 dBrnc0 Transmit Noise, PMessage Weighted NTXP S5T8557B − 74 −67 dBm0p Noise, Single Frequency NSF f = 0kHz to 100kHz, loop around measurement, VFXI + = 0Vrms − − −53 dBm0 Positive Power Supply Rejection, Transmit PSRR (PTX) VFXI + = 0Vrms, VCC = 5.0VDC + 100mVrms f = 0kHz - 50kHz 40 − − dBC |
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