S1A0426C02 datasheet(3/4 Pages) SAMSUNG

Part #	S1A0426C02

Description	AM/FM 1 CHIP RADIO

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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AM/FM 1 CHIP RADIO

S1A0426C02

3

ELECTRICAL CHARACTERISTICS

(VCC = 6 V, Ta = 25 °C, FM; ∆f = 22.5 kHz, fm = 1 kHz, AM; 30% Mod, unless otherwise specified)

Characteristic

Symbol

Test Conditions

Min.

Typ. Max.

Unit

FM

Quiescent Circuit Current

ICCQ(1)

VI = 0

−

7.0

14.0

mA

F/E Voltage Gain

GV(1)

VI(1) = 40dBµ, fc = 100MHz, ∆f = 0

32

39

46

dB

µ

Detect Output Gain

VO(1)

VI(3) = 90dBµ, fi = 10.7MHz

−26

−20

−14 dBm

IF-3 dB Sensitivity

VI (LIM)

Vo(VI3) = 90dB

µ, −3dB, fi = 10.7MHz

−

24

32

dB

Total Harmonic Distortion

THD1

VI(3) = 90dBµ, fi = 10.7MHz

(

∆f = 75kHz)

−

0.3

2.0

%

Meter Drive Current

IM (1)

VI(3) = 60dBµ , fi = 10.7MHz

1.8

3.5

7.0

mA

AM

Quiescent Circuit Current

ICCQ(2)

VI = 0

−

3.5

10.0

mA

F/E Voltage Gain

GV(2)

VI(2) = 60dBµ, fc = 1660kHz, m = 0%

15

22

29

dB

IF Voltage Gain

GV(3)

Vo(3) =

−34dBm, fi = 455kHz

14

20

27

dB

µ

AM Detect Output Voltage

VO(2)

VI(3) = 85dBµ, fi = 455kHz

−26

−20

−14 dBm

Total Harmonic Distortion

THD2

VI(2) = 95dBµ, fc = 1660kHz, Vcc = 7.8V

−

0.6

2.0

%

Meter Drive Current

IM(2)

VI(3) = 85dBµ, fi = 455kHz

1.3

3.0

7.0

mA

AF

Closed Loop Voltage Gain

GV(4)

Vo(4) = 0dBm, f = 1kHz

27

31.5

36

dB

Total Harmonic Distortion

THD3

Po = 50mW, f = 1kHz

−

0.3

2.5

%

Output Power

PO

RL = 8Ω, THD = 10%, f = 1kHz

0.4

0.5

−

W

Mute Level

ML

Po = mW, Vi(4) = 30dBm

1kHz, V1(3) = FF

8

15

22

dB

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