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KT8557B Datasheet(PDF) 3 Page - Samsung semiconductor |
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KT8557B Datasheet(HTML) 3 Page - Samsung semiconductor |
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3 / 10 page  KT8554B/7B 1 CHIP CODECS ELECTRICAL CHARACTERISTICS (Unless otherwise noted, V CC = 5.0V ±5%, VBB = - 5.0V ±5%, GNDA = 0V, Ta = 0 oC to 70 oC ; typical characteristics specified at V CC = 5.0V, VBB = - 5.0V, Ta = 25 oC ; all signals referenced to GNDA). Characteristic Symbol Test Conditions Min Typ Max Unit Power Dissipation Power-Down Current I CC (DOWN) No Load 0.5 1.5 mA Power-Down Current I BB (DOWN) No Load 0.05 0.3 mA Active Current I CC (A) No Load 6.0 9.0 mA Active Current I BB (A) No Load 6.0 9.0 mA Digital Interface Input Low Voltage V IL 0.6 V Input High Voltage V IH 2.2 V Input Low Current I IL GNDA ≤ V IN≤VIL, all digital inputs -10 10 µA Input High Current I IH V IH ≤ VIN ≤ VCC -10 10 µA Output Low Voltage V OL D X,IL = 3.2mA SIG R, IL = 1.0mA TS X, IL = 3.2mA,open drain 0.4 0.4 0.4 V V V D X, IH = -3.2mA SIG R, IH = -1.0 mA 2.4 2.4 V V Output Current in High Impedance State (TRI-STATE) I O (HZ) D X, GNDA ≤ VO ≤ V CC -10 10 µA Analog Interface with Receive Filter Output Resistance R O Pin VF RO 1 3 Ω Load Resistance R L VF RO = ±2.5V 600 Ω Load Capacitance C L 500 pF Output DC Offset Voltage V OO (RX) -200 200 mV Analog Interface with Transmit input Amplifier Input Leakage Current I LKG -2.5V ≤V≤+2.5V, VF XI + or VFXI - -200 200 nA Input Resistance R I -2.5V ≤V≤+2.5V, VF XI + or VFXI - 10 M Ω Output Resistance R O Closed loop, unity gain 1 3 Ω Load Resistance R L GS X 10 K Ω Load Capacitance C L GS X 50 pF Output Dynamic Range V OD (TX) GS X, RL≤10KW ±2.8 V Voltage Gain G V VF XI + to GSX 5,000 V/V Unity Gain Bandwidth BW 1 2 MHz Offset Voltage V IO (TX) -20 20 mV Common-Mode Voltage V CM (TX) CMRRXA > 60dB -2.5 2.5 V Common-Mode Rejection Ratio CMRR DC Test 60 dB Power Supply Rejection Ratio PSRR DC Test 60 dB Output High Voltage V OH |
Similar Part No. - KT8557B |
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Similar Description - KT8557B |
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