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KM681000BLTI-7 Datasheet(PDF) 4 Page - Samsung semiconductor |
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KM681000BLTI-7 Datasheet(HTML) 4 Page - Samsung semiconductor |
4 / 11 page PRELIMINARY Revision 0.3 KM681000B Family CMOS SRAM April 1996 DC AND OPERATING CHARACTERISTICS * 1) Commercial Product : TA=0 to 70¡É, Vcc=5.0V¡¾10%, unless otherwise specified 2) Extended Product : TA=-25 to 85¡É, Vcc=5.0V¡¾10%, unless otherwise specified 2) Industrial Product : TA=-40 to 85¡É, Vcc=5.0V¡¾10%, unless otherwise specified ** 20mA for Exteneded and Industrial Products *** 15mA for Extended and Industrial Products Item Symbol Test Conditions* Mi Typ** Max Unit Input leakage current ILI VIN=Vss to Vcc -1 - 1 §Ë Output leakage current ILO CS1=VIH or CS2=VIL or WE=VIL, VIO=Vss to Vcc -1 - 1 §Ë Operating power supply current ICC CS1=VIL, CS2=VIH, VIN=VIH or VIL, IIO=0mA - 7 15** mA Average operating current ICC1 Cycle time=1§Á 100% duty CS1¡Â0.2V, CS2¡ÃVCC-0.2V - - 10*** mA ICC2 IIO=0mA CS1=VIL,CS2=VIH Min cycle, 100% duty - - 70 mA Output low voltage VOL IOL=2.1mA - - 0.4 V Output high voltage VOH IOH=-1.0mA 2.4 - - V Standby Current(TTL) ISB CS1=VIH, CS2=VIL - - 3 mA Standby Current (CMOS) KM681000BL KM681000BL-L ISB1 CS1¡ÃVcc-0.2V CS2¡ÃVcc-0.2V or CS2¡Â0.2V Other input=0~Vcc L (Low Power) LL (Low Low Power) - - - - 100 20 §Ë §Ë KM681000BLE KM681000BLE-L L (Low Power) LL (Low Low Power) - - - - 100 50 §Ë §Ë KM681000BLI KM681000BLI-L L (Low Power) LL (Low Low Power) - - - - 100 50 §Ë §Ë TEST CONDITIONS(1.Test Load and Test Input/Output Reference)* * See DC Operating conditions Item Value Remark Input pulse level 0.8 to 2.4V - Input rising & falling time 5ns - input and output reference voltage 1.5V - Output load (See right) CL=100pF+1TTL - A.C CHARACTERISTICS CL* * Including scope and jig capacitance |
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