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K9F1G08U0M-VCB0 Datasheet(PDF) 1 Page - Samsung semiconductor |
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K9F1G08U0M-VCB0 Datasheet(HTML) 1 Page - Samsung semiconductor |
1 / 38 page San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 March. 2003 ELECTRONICS 1 1 1Gb Gb 1.8V NAND Flash Errata 1.8V NAND Flash Errata Description : Some of AC characteristics are not meeting the specification. > AC characteristics : Refer to Table Affected Products : K9F1G08Q0M-YCB0/YIB0, K9F1G16Q0M-YCB0/YIB0 K9K2G08Q0M-YCB0/YIB0, K9K2G16Q0M-YCB0/YIB0 Improvement schedule : The components targeted to meet the specification is scheduled to be available by workweek 25 along with the final specification values. Sincerely, chwoosun@sec.samsung.com Product Planning & Application Eng. Memory Division Samsung Electronics Co. Table Parameters Specification Relaxed Condition tWC 45 80 tWH 15 20 tWP 25 60 tRC 50 80 tREH 15 20 tRP 25 60 tREA 30 60 UNIT : ns Workaround : Relax the relevant timing parameters according to the table. tCEA 45 75 |
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