FLASH MEMORY

10

SAMSUNG

K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0

K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0

K9F1G08U0M-VCB0,VIB0,FCB0,FIB0

Parameter

Symbol

Test Conditions

K9F1GXXQ0M(1.8V)

K9F1GXXU0M(3.3V)

Unit

Min

Typ

Max

Min

Typ

Max

Operat-

ing

Current

Page Read with

Serial Access

-

5

15

-

10

20

mA

Program

-

-

5

15

-

10

20

Erase

-

-

5

15

-

10

20

Stand-by Current(TTL)

-

-

1

-

-

1

Stand-by Current(CMOS)

-

20

100

-

20

100

µA

Input Leakage Current

-

-

±20

-

-

±20

Output Leakage Current

-

-

±20

-

-

±20

Input High Voltage

-

-

0.3

2.0

-

V

Input Low Voltage, All inputs

-

-0.3

-

0.4

-0.3

-

0.8

Output High Voltage Level

µA

µA

Vcc-0.1

-

-

2.4

-

-

Output Low Voltage Level

-

-

0.1

-

-

0.4

Output Low Current(R/B)

3

4

-

8

10

-

mA

RECOMMENDED OPERATING CONDITIONS

(Voltage reference to GND, K9F1GXXX0M-XCB0

Parameter

Symbol

K9F1GXXQ0M(1.8V)

K9F1GXXU0M(3.3V)

Unit

Min

Typ.

Max

Min

Typ.

Max

Supply Voltage

1.70

1.8

1.95

2.7

3.3

3.6

V

Supply Voltage

0

0

0

0

0

0

V

ABSOLUTE MAXIMUM RATINGS

NOTE :

1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.

2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions

as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Parameter

Symbol

Rating

Unit

K9F1GXXQ0M(1.8V)

K9F1GXXU0M(3.3V)

-0.6 to + 2.45

-0.6 to + 4.6

V

-0.2 to + 2.45

-0.6 to + 4.6

Temperature Under Bias

K9F1GXXX0M-XCB0

-10 to +125

°C

K9F1GXXX0M-XIB0

-40 to +125

Storage Temperature

K9F1GXXX0M-XCB0

-65 to +150

°C

K9F1GXXX0M-XIB0

Short Circuit Current

Ios

5

mA