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K9F2808U0B-YIB0 Datasheet(PDF) 7 Page - Samsung semiconductor |
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K9F2808U0B-YIB0 Datasheet(HTML) 7 Page - Samsung semiconductor |
7 / 29 page FLASH MEMORY 7 K9F2808U0B-YCB0,YIB0 K9F2808U0B-DCB0,DIB0 K9F2808Q0B-DCB0,DIB0 K9F2808U0B-VCB0,VIB0 PIN DESCRIPTION NOTE : Connect all VCC and VSS pins of each device to common power supply outputs. Pin Name Pin Function I/O0 ~ I/O7 DATA INPUTS/OUTPUTS The I/O pins are used to input command, address and data, and to output data during read operations. The I/O pins float to high-z when the chip is deselected or when the outputs are disabled. CLE COMMAND LATCH ENABLE The CLE input controls the activating path for commands sent to the command register. When active high, commands are latched into the command register through the I/O ports on the rising edge of the WE signal. ALE ADDRESS LATCH ENABLE The ALE input controls the activating path for address to the internal address registers. Addresses are latched on the rising edge of WE with ALE high. CE CHIP ENABLE The CE input is the device selection control. When the device is in the Busy state, CE high is ignored, and the device does not return to standby mode in program or erase opertion. Regarding CE control during read operation, refer to ’Page read’ section of Device operation. RE READ ENABLE The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid tREA after the falling edge of RE which also increments the internal column address counter by one. WE WRITE ENABLE The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of the WE pulse. WP WRITE PROTECT The WP pin provides inadvertent write/erase protection during power transitions. The internal high voltage generator is reset when the WP pin is active low. R/ B READY/BUSY OUTPUT The R/B output indicates the status of the device operation. When low, it indicates that a program, erase or random read operation is in process and returns to high state upon completion. It is an open drain output and does not float to high-z condition when the chip is deselected or when outputs are disabled. VccQ OUTPUT BUFFER POWER VCCQ is the power supply for Output Buffer. VccQ is internally connected to Vcc, thus should be biased to Vcc. Vcc POWER VCC is the power supply for device. Vss GROUND N.C NO CONNECTION Lead is not internally connected. GND GND INPUT FOR ENABLING SPARE AREA To do sequential read mode including spare area , connect this input pin to Vss or set to static low state or to do sequential read mode excluding spare area , connect this input pin to Vcc or set to static high state. DNU DO NOT USE Leave it disconnected. |
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Similar Description - K9F2808U0B-YIB0 |
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