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K9F2808U0B-DCB0 Datasheet(PDF) 3 Page - Samsung semiconductor |
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K9F2808U0B-DCB0 Datasheet(HTML) 3 Page - Samsung semiconductor |
3 / 29 page FLASH MEMORY 3 K9F2808U0B-YCB0,YIB0 K9F2808U0B-DCB0,DIB0 K9F2808Q0B-DCB0,DIB0 K9F2808U0B-VCB0,VIB0 GENERAL DESCRIPTION FEATURES • Voltage Supply - K9F2808Q0B : 1.7~1.9V - K9F2808U0B : 2.7 ~ 3.6 V • Organization - Memory Cell Array : (16M + 512K)bit x 8bit - Data Register : (512 + 16)bit x8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (16K + 512)Byte • 528-Byte Page Read Operation - Random Access : 10 µs(Max.) - Serial Page Access - K9F2808Q0B : 70ns - K9F2808U0B : 50ns • Fast Write Cycle Time - Program Time - K9F2808Q0B : 300 µs(Typ.) - K9F2808U0B : 200 µs(Typ.) - Block Erase Time : 2ms(Typ.) • Command/Address/Data Multiplexed I/O Port • Hardware Data Protection - Program/Erase Lockout During Power Transitions • Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles - Data Retention : 10 Years • Command Register Operation • Package - K9F2808U0B-YCB0/YIB0 : 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9F2808X0B-DCB 0/ DIB0 63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm) - K9F2808U0B-VCB0/VIB0 48 - Pin WSOP I (12X17X0.7mm) * K9F2808U0B-V(WSOPI ) is the same device as K9F2808U0B-Y(TSOP1) except package type. The K9F2808X0B is a 16M(16,777,216)x8bit NAND Flash Memory with a spare 512K(524,288)x8bit. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation pro- grams the 528-byte page in typical 200 µs and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in a page can be read out at 70ns/50ns(K9F2808Q0B:70ns, K9F2808U0B:50ns) cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even write-intensive systems can take advantage of the K9F2808X0B’s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2808X0B is suitable for use in data memory of mobile communication system to reduce not only mount area but also power consumption. PRODUCT LIST Part Number Vcc Range Organization PKG Type K9F2808Q0B-D 1.7 ~ 1.9V X8 TBGA K9F2808U0B-Y 2.7 ~ 3.6V TSOP1 K9F2808U0B-D TBGA K9F2808U0B-V WSOP1 16M x 8 Bit Bit NAND Flash Memory |
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