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K9F1208U0M-YIB0 Datasheet(PDF) 4 Page - Samsung semiconductor |
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K9F1208U0M-YIB0 Datasheet(HTML) 4 Page - Samsung semiconductor |
4 / 41 page K9F1208U0M-YCB0, K9F1208U0M-YIB0 FLASH MEMORY 4 Revision No 0.8 Remark History 1. In Read ID & Status Read timing diagram, tCLS is changed to tCLR. Draft Date Oct. 7th 2001 CE CLE I/O0~7 ALE RE WE 90h 00h ECh Address. 1cycle Maker code tCEA tAR1 tREA tWHR CE WE CLE RE I/O0~7 70h Status Output tCLS tCLH tCS tWP tCH tDS tDH tREA tIR tRHZ* tCHZ* tWHR tCEA tCLS CE CLE I/O0~7 ALE RE WE 90h 00h ECh Address. 1cycle Maker code tCEA tAR1 tREA tWHR CE WE CLE RE I/O0~7 70h Status Output tCLR tCLH tCS tWP tCH tDS tDH tREA tIR tRHZ* tCHZ* tWHR tCEA tCLS tCLS tCLR |
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