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K4S643232E-TL50 Datasheet(PDF) 11 Page - Samsung semiconductor |
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K4S643232E-TL50 Datasheet(HTML) 11 Page - Samsung semiconductor |
11 / 12 page K4S643232E CMOS SDRAM - 11 Rev. 1.3 (Oct. 2001) MODE REGISTER FIELD TABLE TO PROGRAM MODES Register Programmed with MRS Address Function A10/AP RFU A9 W.B.L A8 A7 TM A6 A5 A4 A3 A2 A1 A0 CAS Latency BT Burst Length A8 A7 A6 A5 A4 A3 A2 A1 A0 BT = 0 Test Mode Type Mode Register Set Reserved Reserved Reserved 0 0 1 1 0 1 0 1 Write Burst Length A9 0 1 Length Burst Single Bit Latency Reserved Reserved 2 3 Reserved Reserved Reserved Reserved CAS Latency 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 Burst Type 0 1 BT = 1 Burst Length Type Sequential Interleave 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 1 2 4 8 Reserved Reserved Reserved Full Page 1 2 4 8 Reserved Reserved Reserved Reserved POWER UP SEQUENCE SDRAMs must be powered up and initialized in a predefined manner to prevent undefined operations. 1. Apply power and start clock. Must maintain CKE= "H", DQM= "H" and the other pins are NOP condition at the inputs. 2. Maintain stable power, stable clock and NOP input condition for a minimum of 200us. 3. Issue precharge commands for all banks of the devices. 4. Issue 2 or more auto-refresh commands. 5. Issue a mode register set command to initialize the mode register. cf.) Sequence of 4 & 5 is regardless of the order. The device is now ready for normal operation. Note : 1. If A9 is high during MRS cycle, "Burst Read Single Bit Write" function will be enabled. 2. RFU (Reserved for future use) should stay "0" during MRS cycle. Full Page Length : x32 (256) BA0 ~ BA1 RFU |
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