K4S643232E-TI datasheet(6/12 Pages) SAMSUNG

Part #	K4S643232E-TI

Description	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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6 / 12 page

K4S643232E-TI/P

CMOS SDRAM

- 6 -

Rev. 1.2 (Oct. 2001)

DC OPERATING CONDITIONS

•Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -45oC to +85oC)

Parameter

Symbol

Min

Typ

Max

Unit

Note

Supply voltage

VDD, VDDQ

3.0

3.3

3.6

V

Input logic high voltage

VIH

2.0

3.0

VDDQ+0.3

V

1

Input logic low voltage

VIL

-0.3

0

0.8

V

2

Output logic high voltage

VOH

2.4

-

V

IOH = -2mA

Output logic low voltage

VOL

-

0.4

V

IOL = 2mA

Input leakage current

ILI

-10

-

10

uA

3

1. VIH (max) = 5.6V AC.The overshoot voltage duration is

≤ 3ns.

2. VIL (min) = -2.0V AC. The undershoot voltage duration is

≤ 3ns.

3. Any input 0V

≤ VIN ≤ VDDQ,

Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.

4. The VDD condition of K4S643232E-60 is 3.135V ~ 3.6V

Notes :

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Voltage on any pin relative to Vss

VIN, VOUT

-1.0 ~ 4.6

V

Voltage on VDD supply relative to Vss

VDD, VDDQ

-1.0 ~ 4.6

V

Storage temperature

TSTG

-55 ~ +150

°C

Power dissipation

PD

1

W

Short circuit current

IOS

50

mA

Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

Note :

CAPACITANCE (VDD = 3.3V, TA = 23

°C, f = 1MHz, VREF = 1.4V ± 200 mV)

Symbol

Min

Max

Unit

Clock

CCLK

-

4

pF

RAS, CAS, WE, CS, CKE, DQM

CIN

-

4.5

pF

Address

CADD

-

4.5

pF

DQ0 ~ DQ31

COUT

-

6.5

pF

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