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K4S643232E-TE50 Datasheet(PDF) 9 Page - Samsung semiconductor

Part # K4S643232E-TE50
Description  2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K4S643232E-TE50 Datasheet(HTML) 9 Page - Samsung semiconductor

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K4S643232E-TE/N
CMOS SDRAM
- 9 -
Rev. 1.4 (Dec. 2001)
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf)=1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Note :
Parameter
Symbol
Version
Unit
-50
-60
-70
Row active to row active delay
tRRD(min)
10
12
14
ns
RAS to CAS delay
tRCD(min)
15
18
20
ns
Row precharge time
tRP(min)
15
18
20
ns
Row active time
tRAS(min)
40
42
49
ns
tRAS(max)
100
us
Row cycle time
tRC(min)
55
60
70
ns
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
4. In case of row precharge interrupt, auto precharge and read burst stop.
AC CHARACTERISTICS (AC operating conditions unless otherwise noted)
Parameter
Symbol
-50
-60
-70
Unit
Note
Min
Max
Min
Max
Min
Max
CLK cycle time
CAS Latency=3
tCC
5
1000
6
1000
7
1000
ns
1
CAS Latency=2
10
10
10
CLK to valid
output delay
CAS Latency=3
tSAC
-
4.5
-
5.5
-
5.5
ns
1, 2
CAS Latency=2
-
6
-
6
-
6
Output data hold time
tOH
2
-
2
-
2
-
ns
2
CLK high pulse width
CAS Latency=3
tCH
2
-
2.5
-
3
-
ns
3
CAS Latency=2
3
-
3
-
3
-
CLK low
pulse width
CAS Latency=3
tCL
2
-
2.5
-
3
-
ns
3
CAS Latency=2
3
-
3
-
3
-
Input setup time
CAS Latency=3
tSS
1.5
-
1.5
-
1.75
-
ns
3
CAS Latency=2
2.5
-
2.5
-
2.5
-
Input hold time
tSH
1
-
1
-
1
-
ns
3
CLK to output in Low-Z
tSLZ
1
-
1
-
1
-
ns
2
CLK to output
in Hi-Z
CAS Latency=3
tSHZ
-
4.5
-
5.5
-
5.5
ns
-
CAS Latency=2
-
6
-
6
-
6


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