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K4S643232E-TE50 Datasheet(PDF) 9 Page - Samsung semiconductor |
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K4S643232E-TE50 Datasheet(HTML) 9 Page - Samsung semiconductor |
9 / 12 page K4S643232E-TE/N CMOS SDRAM - 9 - Rev. 1.4 (Dec. 2001) 1. Parameters depend on programmed CAS latency. 2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf)=1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]ns should be added to the parameter. Note : Parameter Symbol Version Unit -50 -60 -70 Row active to row active delay tRRD(min) 10 12 14 ns RAS to CAS delay tRCD(min) 15 18 20 ns Row precharge time tRP(min) 15 18 20 ns Row active time tRAS(min) 40 42 49 ns tRAS(max) 100 us Row cycle time tRC(min) 55 60 70 ns 2. Minimum delay is required to complete write. 3. All parts allow every cycle column address change. 4. In case of row precharge interrupt, auto precharge and read burst stop. AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter Symbol -50 -60 -70 Unit Note Min Max Min Max Min Max CLK cycle time CAS Latency=3 tCC 5 1000 6 1000 7 1000 ns 1 CAS Latency=2 10 10 10 CLK to valid output delay CAS Latency=3 tSAC - 4.5 - 5.5 - 5.5 ns 1, 2 CAS Latency=2 - 6 - 6 - 6 Output data hold time tOH 2 - 2 - 2 - ns 2 CLK high pulse width CAS Latency=3 tCH 2 - 2.5 - 3 - ns 3 CAS Latency=2 3 - 3 - 3 - CLK low pulse width CAS Latency=3 tCL 2 - 2.5 - 3 - ns 3 CAS Latency=2 3 - 3 - 3 - Input setup time CAS Latency=3 tSS 1.5 - 1.5 - 1.75 - ns 3 CAS Latency=2 2.5 - 2.5 - 2.5 - Input hold time tSH 1 - 1 - 1 - ns 3 CLK to output in Low-Z tSLZ 1 - 1 - 1 - ns 2 CLK to output in Hi-Z CAS Latency=3 tSHZ - 4.5 - 5.5 - 5.5 ns - CAS Latency=2 - 6 - 6 - 6 |
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