K4S281632B-TC75 datasheet(5/10 Pages) SAMSUNG

Part #	K4S281632B-TC75

Description	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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5 / 10 page

K4S281632B

Rev. 0.0 Aug. 1999

CMOS SDRAM

DC CHARACTERISTICS

1. Measured with outputs open.

2. Refresh period is 64ms.

3. K4S281632B-TC**

4. K4S281632B-TL**

5. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ)

Notes :

(Recommended operating condition unless otherwise noted, TA = 0 to 70

°C)

Parameter

Symbol

Test Condition

Version

Unit Note

-75

-80

-1H

-1L

-10

Operating current

(One bank active)

ICC1

Burst length = 1

tRC

≥ tRC(min)

IO = 0 mA

150

140

mA

1

Precharge standby current in

power-down mode

ICC2P

CKE

≤ VIL(max), tCC = 10ns

1

mA

ICC2PS

CKE & CLK

≤ VIL(max), tCC = ∞

1

Precharge standby current in

non power-down mode

ICC2N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

20

mA

ICC2NS

CKE

≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

7

Active standby current in

power-down mode

ICC3P

CKE

≤ VIL(max), tCC = 10ns

5

mA

ICC3PS

CKE & CLK

≤ VIL(max), tCC = ∞

5

Active standby current in

non power-down mode

(One bank active)

ICC3N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

30

mA

ICC3NS

CKE

≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

20

mA

Operating current

(Burst mode)

ICC4

IO = 0 mA

Page burst

4Banks Activated

tCCD = 2CLKs

180

170

145

mA

1

Refresh current

ICC5

tRC

≥ tRC(min)

220

210

mA

2

Self refresh current

ICC6

CKE

≤ 0.2V

C

1.5

mA

3

L

800

uA

4

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K4S281632B-TC75 Datasheet(PDF) 5 Page - Samsung semiconductor

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