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K4E641612C Datasheet(PDF) 1 Page - Samsung semiconductor

Part # K4E641612C
Description  4M x 16bit CMOS Dynamic RAM with Extended Data Out
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K4E641612C Datasheet(HTML) 1 Page - Samsung semiconductor

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CMOS DRAM
K4E661612C,K4E641612C
This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random
access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor-
mal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden
refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 EDO Mode DRAM family is fabricated
using Samsung
′s advanced CMOS process to realize high band-width, low power consumption and high reliability.
• Extended Data Out Mode operation
• 2 CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Fast parallel test mode capability
• Self-refresh capability (L-ver only)
• LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic TSOP(II) packages
• +3.3V
±0.3V power supply
Control
Clocks
Lower
Data out
Buffer
RAS
UCAS
LCAS
W
Vcc
Vss
DQ0
to
DQ7
A0~A12
(A0~A11)*1
A0~A8
(A0~A9)*1
Memory Array
4,194,304 x 16
Cells
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.
4M x 16bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
Note) *1 : 4K Refresh
Upper
Data in
Buffer
Upper
Data out
Buffer
Lower
Data in
Buffer
DQ8
to
DQ15
OE
Row Decoder
Column Decoder
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
Row Address Buffer
Col. Address Buffer
• Part Identification
- K4E661612C-TC/L(3.3V, 8K Ref.)
- K4E641612C-TC/L(3.3V, 4K Ref.)
FEATURES
• Refresh Cycles
Part
NO.
Refresh
cycle
Refresh time
Normal
L-ver
K4E661612C*
8K
64ms
128ms
K4E641612C
4K
Unit : mW
* Access mode & RAS only refresh mode
: 8K cycle/64ms(Normal), 8K cycle/128ms(L-ver.)
CAS-before-RAS & Hidden refresh mode
: 4K cycle/64ms(Normal), 4K cycle/128ms(L-ver.)
• Active Power Dissipation
Speed
8K
4K
-45
324
468
-50
288
432
-60
252
396
• Performance Range
Speed
tRAC
tCAC
tRC
tHPC
-45
45ns
12ns
74ns
17ns
-50
50ns
13ns
84ns
20ns
-60
60ns
15ns
104ns
25ns


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