Rev. 1.10

- 9 -

s

s

s

s

TYPICAL APPLICATIONS AND TECHNICAL NOTES

<R1211X002A/R1211X002C>

C3

Inductor

Diode

NMOS

EXT

DELAY

VFB

GND AMPOUT

C1

C2

C4

R1

R2

R3

C5

R4

NMOS: IRF7601 (International Rectifier)

Inductor : LDR655312T-100 10

µH (TDK) for R1211X002A

: LDR655312T-220 22

µH (TDK) for R1211X002C

Diode: CRS02 (Toshiba)

C1: 4.7

µF (Ceramic)

R1: Output Voltage Setting Resistor 1

C2: 0.22

µF (Ceramic)

R2: Output Voltage Setting Resistor 2

C3: 10

µF (Ceramic)

R3: 30k

Ω

C4: 680pF(Ceramic)

R4: 30k

Ω

C5: 2200pF(Ceramic)

<R1211X002B/R1211X002D>

Inductor

Diode

NMOS

VIN

EXT

DELAY

VFB

GND

CE

C1

C2

C3

C4

R1

R2

R3

CE Control

NMOS: IRF7601 (International Rectifier)

Inductor: LDR655312T-100 10

µH (TDK) for R1211X002B

LDR655312T-220 22

µH (TDK) for R1211X002D

Diode: CRS02 (Toshiba)

C1: 4.7

µF (Ceramic)

R1: Setting Output Voltage Resistor1

C2: 0.22

µF (Ceramic)

R2: Setting Output Voltage Resistor2

C3: 10

µF (Ceramic)

R3 : 30k

Ω

C4: 680pF(Ceramic)

[Note] These example circuits may be applied to the output voltage requirement is 15V or less. If the output voltage

requirement is 15V or more, ratings of NMOS and diode as shown above is over the limit, therefore, choose other

external components.