FMY5

Transistor

Rev.B

2/4

Electrical characteristics (Ta=25

°C)

Note:The slash denotes NPN/PNP. PNP type negative symbols have been omitted.

∗Transition frequency of the device.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

120

120

5

−

−

−

−

−

−

−

−

−

−

−

−

0.5

0.5

0.5

V

V

V

µA

µA

V

−50µA

−1mA

−50µA

−100V

−4V

180

−

820

−

Cob

−

−

140

3/4

−

−

MHz

pF

∗

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff curren

Collector-emitter saturation voltage

DC current transfer ratio

Transition frequency

Output capacitance

Electrical characteristics curves

Tr1

0

−20

−16

−12

−8

−4

−2

−4

−6

−8

−10

Fig.1 Ground emitter output characteristics

Ta

=25°C

−25.0

−22.5

−20.0

−17.5

−15.0

−12.5

−10.0

−7.5

−5.0

−2.5µA

=0

0

−1.6

−1.4

−1.2

−1.0

−0.8

−0.6

−0.4

−0.2

−0.1

−0.2

−0.5

−1

−2

−5

−10

−20

−50

Fig.2 Ground emitter propagation

characteristics

= −6V

Ta

=25°C

500

200

100

50

−0.2

−0.5

−1

−2

−5

−10

−20

−50

Fig.3 DC current gain vs. collector current

(mA)

Ta

=25°C

= −1V

−5V

−0.05

−0.1

−0.2

−0.5

−0.2

−0.5

−1

−2

−5

−10

−20

−50

Fig.4 Collector-Emitter saturation voltage

vs. collector current

(mA)

Ta

=25°C

=50/1

20/1

10/1

500

200

100

50

0.5

1

2

5

10

20

50

= −6V

Fig.5 Transition frequency

vs. emitter current

(mA)

Ta

=25°C

10

20

5

2

1

−0.5

−1

−2

−5

−10

−20

f

=0A

Fig.6 Collector output capacitance

vs. collector-base voltage

(V)

Ta

=25°C

Cob