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BR93LL46FV Datasheet(PDF) 10 Page - Rohm

Part # BR93LL46FV
Description  1,024-Bit Serial Electrically Erasable PROM
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Manufacturer  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

BR93LL46FV Datasheet(HTML) 10 Page - Rohm

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10
Memory ICs
BR93LL46F / BR93LL46FV
CS
SK
DI
DO
D1
D0
READY
BUSY
Write command
Status detection
Command input
DI
DO
D1
D0
BUSY
READY
High-Z
High-Z
DI: EEPROM DI terminal; DO: EEPROM DO output; DI / DO: µ-COM I / O terminal
Fig. 9 Timing diagram chart
4) When the
µ-COM port is the open drain port
When the
µ-COM port is the open drain output port, it
responds through software as shown in Figure 8. This
method will not work during CMOS input and output.
The timing which becomes a problem (production of
feedthrough current paths) for the open drain port only
occurs when CS is HIGH after a write command. Feed-
through current paths can occur in the period between
the rise of the CS to the input of the start bit. If CS rises
before the start bit, as shown in Figure 8, and DI is
HIGH at the same time, current paths are not created.
Make sure to set SK to LOW during a CS rise.
In this case, however, the first SK rise after the CS
rises is interpreted as the start bit. Therefore, caution is
required. Figure 9 shows a timing chart from the end of
a write command to the next command input. As
shown in the figure, after completion of the write com-
mand input, when CS rises, set SK to LOW and stop
the SK input. Otherwise, if DO is HIGH when a clock
pulse is input, this is taken as the start bit and may
cause erroneous operation.
Start bit
1
2
34
CS
SK
DI
DO
High-Z
Fig. 8 Using an open drain port


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