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2-274
RF3100-3
Rev A2 011017
2
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage (RF off)
+8.0
VDC
Supply Voltage (POUT≤28dBm)
+5.2
VDC
Control Voltage (VREG)+4.2
VDC
Mode Voltage (VMODE)+3.5
VDC
Input RF Power
+10
dBm
Operating Case Temperature
-30 to +110
°C
Storage Temperature
-30 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
High Power State
(VMODE Low)
Typical Performance at VCC=3.2V,
VREG=2.85V, TAMB=25°C,
Frequency= 1850MHz to 1910MHz
(unless otherwise specified)
Frequency Range
1850
1910
MHz
Linear Gain
24
26.5
dB
Second Harmonic
-43
dBc
Third Harmonic
-56
dBc
Maximum Linear Output Power
(CDMA Modulation)
28
dBm
Total Linear Efficiency
35
%
POUT=28dBm
Adjacent Channel Power
Rejection
-48
-45
dBc
ACPR @1.25MHz, VCC=3.4V,
POUT=28dBm
-62
-58
dBc
ACPR @2.25MHz, VCC=3.4V,
POUT=28dBm
Input VSWR
< 2.5:1
Output VSWR
10:1
No damage.
6:1
No oscillations. > -70dBc
Noise Power
-141
dBm/Hz
At 80MHz offset.
Low Power State
(VMODE High)
Typical Performance at VCC=3.2V,
VREG=2.85V, TAMB=25°C,
Frequency= 1850MHz to 1910MHz
(unless otherwise specified)
Frequency Range
1850
1910
MHz
Linear Gain
14
19
dB
Second Harmonic
-43
dBc
Third Harmonic
-56
dBc
Maximum Linear Output Power
(CDMA Modulation)
16
dBm
Adjacent Channel Power
Rejection
-52
-46
dBc
ACPR @1.25MHz
-66
-59
dBc
ACPR @2.25MHz
Input VSWR
< 2.5:1
Output VSWR
10:1
No damage.
6:1
No oscillations. > -70dBc
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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