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HEF4528B Datasheet(PDF) 5 Page - NXP Semiconductors |
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HEF4528B Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 16 page HEF4528B_6 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 — 27 November 2009 5 of 16 NXP Semiconductors HEF4528B Dual monostable multivibrator 9. Recommended operating conditions 10. Static characteristics Table 5. Recommended operating conditions Symbol Parameter Conditions Min Typ Max Unit VDD supply voltage 3 - 15 V VI input voltage 0 - VDD V Tamb ambient temperature in free air −40 - +85 °C ∆t/∆V input transition rise and fall rate VDD = 5 V - - 3.75 µs/V VDD = 10 V - - 0.5 µs/V VDD = 15 V - - 0.08 µs/V Table 6. Static characteristics VSS = 0 V; VI =VSS or VDD; unless otherwise specified. Symbol Parameter Conditions VDD Tamb = −40 °C Tamb = +25 °C Tamb = +85 °C Unit Min Max Min Max Min Max VIH HIGH-level input voltage |IO| < 1 µA 5 V 3.5 - 3.5 - 3.5 - V 10 V 7.0 - 7.0 - 7.0 - V 15 V 11.0 - 11.0 - 11.0 - V VIL LOW-level input voltage |IO| < 1 µA 5 V - 1.5 - 1.5 - 1.5 V 10 V - 3.0 - 3.0 - 3.0 V 15 V - 4.0 - 4.0 - 4.0 V VOH HIGH-level output voltage |IO| < 1 µA 5 V 4.95 - 4.95 - 4.95 - V 10 V 9.95 - 9.95 - 9.95 - V 15 V 14.95 - 14.95 - 14.95 - V VOL LOW-level output voltage |IO| < 1 µA 5 V - 0.05 - 0.05 - 0.05 V 10 V - 0.05 - 0.05 - 0.05 V 15 V - 0.05 - 0.05 - 0.05 V IOH HIGH-level output current VO = 2.5 V 5 V −1.7 - −1.4 - −1.1 - mA VO = 4.6 V 5 V −0.52 - −0.44 - −0.36 - mA VO = 9.5 V 10 V −1.3 - −1.1 - −0.9 - mA VO = 13.5 V 15 V −3.6 - −3.0 - −2.4 - mA IOL LOW-level output current VO = 0.4 V 5 V 0.52 - 0.44 - 0.36 - mA VO = 0.5 V 10 V 1.3 - 1.1 - 0.9 - mA VO = 1.5 V 15 V 3.6 - 3.0 - 2.4 - mA II input leakage current 15 V - ±0.3 - ±0.3 - ±1.0 µA IDD supply current all valid input combinations; IO =0A 5 V - 20 - 20 - 150 µA 10 V - 40 - 40 - 300 µA 15 V - 80 - 80 - 600 µA CI input capacitance - - - - 7.5 - - pF |
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