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MIC5164 Datasheet(PDF) 4 Page - Micrel Semiconductor |
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MIC5164 Datasheet(HTML) 4 Page - Micrel Semiconductor |
4 / 23 page Micrel, Inc. MIC5164 June 2010 4 M9999-061510 Electrical Characteristics (4) (Continued) TA = 25°C = VDDQ = 1.5V; VCC = 5V, VEN = VCC, bold values indicate –40°C ≤ TJ ≤ +125°C, unless otherwise specified. See test circuit 1 for test circuit configuration. Parameter Condition Min. Typ. Max. Units Power Good Output Power Good Deglitch (Note 9) Time after VFB voltage has gone outside of PG window 5 10 μs Driver High-Side MOSFET Fully ON 4.8 4.97 V High-Side Gate Drive Voltage High-Side MOSFET Fully OFF 0.03 0.2 V Low-Side MOSFET Fully ON 4.8 4.97 V Low-Side Gate Drive Voltage Low-Side MOSFET Fully OFF 0.03 0.2 V Notes: 1. Exceeding the absolute maximum rating may damage the device. 2. The device is not guaranteed to function outside its operating rating. 3. Devices are ESD sensitive. Handling precautions recommended. Human body model 1.5kΩ in series with 100pF. 4. Specification for packaged product only. 5. The VTT voltage accuracy is measured as a delta voltage from the reference output (VTT - VREF). 6. Shutdown current is measured only on the VCC pin. The VDDQ pin will always draw a minimum amount of current when voltage is applied. 7. Start-up time is defined as the amount of time from EN = VCC to VHD = 90% of VCC. 8. Power Good startup delay is defined as the amount of time from EN =VCC and VFB is within ±10% of ½VDDQ to VPG = 90% of VCC (VFB = VREF), during startup (VFB is the sense of VTT). 9. Power Good deglitch is defined as the amount of time from the voltage at FB node going out of PG window (with 10mV overdrive voltage) to PG = LOW. |
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