BAS45AL

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Product data sheet

Rev. 5 — 6 August 2010

5 of 11

NXP Semiconductors

BAS45AL

Low-leakage diode

8.

Test information

°C

Fig 4.

Reverse current as a function of junction

temperature

Fig 5.

Diode capacitance as a function of reverse

voltage; typical values

mbd456

10

150

50

0

100

1

(nA)

typ

max

mbg524

010

20

15

5

3

2

0

1

(pF)

Fig 6.

Reverse recovery time test circuit and waveforms

trr

(1)

t

output signal

t

10 %

90 %

input signal

D.U.T.

SAMPLING

OSCILLOSCOPE

mga881