BGD904MI datasheet(5/11 Pages) NXP

Part #	BGD904MI

Description	860 MHz, 20 dB gain power doubler amplifier

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Manufacturer	NXP [NXP Semiconductors]

Direct Link	http://www.nxp.com

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5 / 11 page

2001 Nov 01

5

NXP Semiconductors

Product specification

860 MHz, 20 dB gain power doubler

amplifier

BGD904; BGD904MI

Fig.2

Composite triple beat as a function of

frequency under tilted conditions.

ZS =ZL =75 Ω; VB = 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);

tilt = 3.5 dB at

−6 dB offset (550 to 750 MHz).

(1) Vo.

(2)

Typ. +3

σ.

(3)

Typ.

(4) Typ.

−3 σ.

0

f (MHz)

CTB

(dB)

200

1000

−50

−60

−80

−90

−70

52

48

40

36

44

400

600

800

mda983

(1)

(2)

(3)

(4)

(2)

(3)

(4)

Vo

(dBmV)

Fig.3

Cross modulation as a function of frequency

under tilted conditions.

ZS =ZL =75 Ω; VB = 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);

tilt = 3.5 dB at

−6 dB offset (550 to 750 MHz).

0

Vo

(dBmV)

f (MHz)

Xmod

(dB)

200

1000

−50

−60

−80

−90

−70

52

48

40

36

44

400

600

800

mda984

(1)

(2)

(3)

(4)

(1) Vo.

(2)

Typ. +3

σ.

(3)

Typ.

(4) Typ.

−3 σ.

Fig.4

Composite second order distortion as a

function of frequency under tilted

conditions.

ZS =ZL =75 Ω; VB = 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);

tilt = 3.5 dB at

−6 dB offset (550 to 750 MHz).

0

Vo

(dBmV)

f (MHz)

CSO

(dB)

200

1000

−50

−60

−80

−90

−70

52

48

40

36

44

400

600

800

mda985

(1)

(2)

(3)

(4)

(2)

(3)

(1)

(4)

(1) Vo.

(2)

Typ. +3

σ.

(3)

Typ.

(4) Typ.

−3 σ.

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