2002 Jan 23

4

NXP Semiconductors

Product specification

860 MHz, 18.5 dB gain power doubler amplifier

BGD802

Table 2

Notes

2. Measured according to DIN45004B:

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

power gain

f = 50 MHz

18

18.5

19

dB

f = 860 MHz

18.5

19.5

−

dB

SL

slope cable equivalent

f = 40 to 860 MHz

0.2

1.1

2

dB

FL

flatness of frequency response

f = 40 to 860 MHz

−±0.2

±0.5

dB

input return losses

f =40to80MHz

20

35

−

dB

f = 80 to 160 MHz

18.5

31

−

dB

f=160to320 MHz

17

27

−

dB

f=320to640 MHz

15.5

22

−

dB

f=640to860 MHz

14

20

−

dB

output return losses

f = 40 to 80 MHz

20

29.5

−

dB

f = 80 to 160 MHz

18.5

29

−

dB

f=160to320 MHz

17

25.5

−

dB

f=320to640 MHz

15.5

23

−

dB

f=640to860 MHz

14

22

−

dB

phase response

f = 50 MHz

−45

−

+45

deg

CTB

composite triple beat

129 channels flat;

measured at 859.25 MHz

−−56.5

−54

dB

cross modulation

129 channels flat;

measured at 55.25 MHz

−−61

−59

dB

CSO

composite second order distortion 129 channels flat;

measured at 860.5 MHz

−−64.5

−56

dB

second order distortion

note 1

−−75

−69

dB

output voltage

61.5

63

−

dBmV

NF

noise figure

see Table 1

−−−

dB

total current consumption (DC)

note 3

−

395

410

mA