NTTFS5811NLTAG datasheet(2/6 Pages) ONSEMI

Part #	NTTFS5811NLTAG

Description	Power MOSFET 40 V, 53 A, 6.4 m廓

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NTTFS5811NL

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ELECTRICAL CHARACTERISTICS (TJ =25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain--to--Source Breakdown Voltage

V(BR)DSS

VGS =0 V, ID = 250 mA

40

V

Drain--to--Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

35

mV/°C

Zero Gate Voltage Drain Current

IDSS

VGS =0 V,

VDS =40 V

TJ =25°C

1.0

mA

TJ = 125°C

10

Gate--to--Source Leakage Current

IGSS

VDS =0 V, VGS = ±20 V

±100

nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

VGS(TH)

VGS =VDS,ID = 250 mA

1.5

1.7

2.2

V

Negative Threshold Temperature

Coefficient

VGS(TH)/TJ

--6

mV/°C

Drain--to--Source On Resistance

RDS(on)

VGS =10 V

ID =20 A

5.5

6.4

mΩ

VGS =4.5 V

ID =20 A

8.3

10

Forward Transconductance

gFS

VDS =5 V, ID =10 A

24.6

S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

Ciss

VGS = 0 V,f= 1.0MHz,VDS =25 V

1570

pF

Output Capacitance

Coss

215

Reverse Transfer Capacitance

Crss

157

Total Gate Charge

QG(TOT)

VGS =10 V, VDS =32 V, ID =10 A

31

nC

VGS =4.5 V, VDS =32 V, ID =10 A

18

Threshold Gate Charge

QG(TH)

VGS =4.5 V, VDS =32 V, ID =10 A

1

nC

Gate--to--Source Charge

QGS

5

Gate--to--Drain Charge

QGD

10

Plateau Voltage

VGP

3

V

Gate Resistance

RG

0.61

Ω

SWITCHING CHARACTERISTICS (Note 3)

Turn--On Delay Time

td(on)

VGS =4.5 V, VDS =32 V,

ID =10 A, RG =2.5 Ω

11

ns

Rise Time

tr

30

Turn--Off Delay Time

td(off)

21

Fall Time

tf

12

DRAIN--SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS =0 V,

IS =10 A

TJ =25°C

0.74

1.2

V

TJ = 125°C

0.58

Reverse Recovery Time

tRR

VGS =0 V, dIS/dt = 100 A/ms,

IS =10 A

21

ns

Charge Time

ta

11

Discharge Time

tb

10

Reverse Recovery Charge

QRR

12

nC

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

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