NTP13N10G datasheet(2/7 Pages) ONSEMI

Part #	NTP13N10G

Description	Power MOSFET 13 A, 100 V, N?묬hannel Enhancement?묺ode TO??20

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NTP13N10

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

100

−

147

−

Vdc

mV/°C

Zero Gate Voltage Collector Current

(VGS = 0 Vdc, VDS = 100 Vdc, TJ = 25°C)

(VGS = 0 Vdc, VDS = 100 Vdc, TJ = 125°C)

IDSS

−

5.0

50

mAdc

Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0)

IGSS

−

± 100

nAdc

ON CHARACTERISTICS

Gate Threshold Voltage

VDS = VGS, ID = 250 mAdc)

Temperature Coefficient (Negative)

VGS(th)

2.0

−

3.2

−7.6

4.0

−

Vdc

mV/°C

Static Drain−to−Source On−State Resistance

(VGS = 10 Vdc, ID = 6.5 Adc)

(VGS = 10 Vdc, ID = 6.5 Adc, TJ = 125°C)

RDS(on)

−

0.130

0.250

0.165

0.400

Ω

Drain−to−Source On−Voltage

(VGS = 10 Vdc, ID = 13 Adc)

VDS(on)

−

1.82

2.34

Vdc

Forward Transconductance (VDS = 15 Vdc, ID = 6.5 Adc)

gFS

−

6.0

−

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

−

390

550

pF

Output Capacitance

Coss

−

115

160

Reverse Transfer Capacitance

Crss

−

35

70

SWITCHING CHARACTERISTICS (Notes 2 & 3)

Turn−On Delay Time

(VDD = 80 Vdc, ID = 13 Adc,

VGS = 10 Vdc, RG = 9.1 Ω)

td(on)

−

11

20

ns

Rise Time

tr

−

40

80

Turn−Off Delay Time

td(off)

−

20

40

Fall Time

tf

−

36

70

Gate Charge

(VDS = 80 Vdc, ID = 13 Adc,

VGS = 10 Vdc)

Qtot

−

14

20

nC

Qgs

−

3.0

−

Qgd

−

7.0

−

BODY−DRAIN DIODE RATINGS (Note 2)

Forward On−Voltage

(IS = 13 Adc, VGS = 0 Vdc)

(IS = 13 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

−

0.98

0.88

1.3

−

Vdc

Reverse Recovery Time

(IS = 13 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/ms)

trr

−

85

−

ns

ta

−

60

−

tb

−

28

−

Reverse Recovery Stored Charge

QRR

−

0.3

−

mC

2. Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%.

3. Switching characteristics are independent of operating junction temperature.

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