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NTP13N10G Datasheet(PDF) 2 Page - ON Semiconductor |
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NTP13N10G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 7 page NTP13N10 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) V(BR)DSS 100 − − 147 − − Vdc mV/°C Zero Gate Voltage Collector Current (VGS = 0 Vdc, VDS = 100 Vdc, TJ = 25°C) (VGS = 0 Vdc, VDS = 100 Vdc, TJ = 125°C) IDSS − − − − 5.0 50 mAdc Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0) IGSS − − ± 100 nAdc ON CHARACTERISTICS Gate Threshold Voltage VDS = VGS, ID = 250 mAdc) Temperature Coefficient (Negative) VGS(th) 2.0 − 3.2 −7.6 4.0 − Vdc mV/°C Static Drain−to−Source On−State Resistance (VGS = 10 Vdc, ID = 6.5 Adc) (VGS = 10 Vdc, ID = 6.5 Adc, TJ = 125°C) RDS(on) − − 0.130 0.250 0.165 0.400 Ω Drain−to−Source On−Voltage (VGS = 10 Vdc, ID = 13 Adc) VDS(on) − 1.82 2.34 Vdc Forward Transconductance (VDS = 15 Vdc, ID = 6.5 Adc) gFS − 6.0 − mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss − 390 550 pF Output Capacitance Coss − 115 160 Reverse Transfer Capacitance Crss − 35 70 SWITCHING CHARACTERISTICS (Notes 2 & 3) Turn−On Delay Time (VDD = 80 Vdc, ID = 13 Adc, VGS = 10 Vdc, RG = 9.1 Ω) td(on) − 11 20 ns Rise Time tr − 40 80 Turn−Off Delay Time td(off) − 20 40 Fall Time tf − 36 70 Gate Charge (VDS = 80 Vdc, ID = 13 Adc, VGS = 10 Vdc) Qtot − 14 20 nC Qgs − 3.0 − Qgd − 7.0 − BODY−DRAIN DIODE RATINGS (Note 2) Forward On−Voltage (IS = 13 Adc, VGS = 0 Vdc) (IS = 13 Adc, VGS = 0 Vdc, TJ = 125°C) VSD − − 0.98 0.88 1.3 − Vdc Reverse Recovery Time (IS = 13 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) trr − 85 − ns ta − 60 − tb − 28 − Reverse Recovery Stored Charge QRR − 0.3 − mC 2. Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%. 3. Switching characteristics are independent of operating junction temperature. |
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