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NTMFS4941N Datasheet(PDF) 1 Page - ON Semiconductor

Part # NTMFS4941N
Description  Power MOSFET 30 V, 47 A, Single N?묬hannel, SO?? FL
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTMFS4941N Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2009
September, 2009 − Rev. 2
1
Publication Order Number:
NTMFS4941N/D
NTMFS4941N
Power MOSFET
30 V, 47 A, Single N−Channel, SO−8 FL
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
CPU Power Delivery
DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain
Current RqJA
(Note 1)
Steady
State
TA = 25°C
ID
15
A
TA = 100°C
9.4
Power Dissipation
RqJA (Note 1)
TA = 25°C
PD
2.56
W
Continuous Drain
Current RqJA
10 s (Note 1)
TA = 25°C
ID
25
A
TA = 100°C
16
Power Dissipation
RqJA ≤ 10 s
(Note 1)
TA = 25°C
PD
7.2
W
Continuous Drain
Current RqJA
(Note 2)
TA = 25°C
ID
9.0
A
TA = 100°C
5.7
Power Dissipation
RqJA (Note 2)
TA = 25°C
PD
0.91
W
Continuous Drain
Current RqJC
(Note 1)
TC = 25°C
ID
47
A
TC =100°C
30
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
25.5
W
Pulsed Drain Current
TA = 25°C, tp = 10 ms
IDM
140
A
Current Limited by Package
TA = 25°C
IDmax
100
A
Operating Junction and Storage
Temperature
TJ,
TSTG
−55 to
+150
°C
Source Current (Body Diode)
IS
23
A
Drain to Source DV/DT
dV/dt
7.5
V/ns
Single Pulse Drain−to−Source Avalanche
Energy TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 29 Apk, L = 0.1 mH, RG = 25 W
EAS
42
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
http://onsemi.com
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
4941N
AYWWG
G
1
V(BR)DSS
RDS(ON) MAX
ID MAX
30 V
6.2 mW @ 10 V
47 A
9.0 mW @ 4.5 V
G (4)
S (1,2,3)
N−CHANNEL MOSFET
D (5,6)
Device
Package
Shipping
ORDERING INFORMATION
NTMFS4941NT1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4941NT3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
S
S
S
G
D
D
D
D


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