NTMFS4937NT1G datasheet(3/7 Pages) ONSEMI

Part #	NTMFS4937NT1G

Description	Power MOSFET 30 V, 70 A, Single N?묬hannel, SO?? FL

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NTMFS4937N

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Unit

Max

Typ

Min

Test Condition

Symbol

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

td(ON)

VGS = 10 V, VDS = 15 V,

ID = 15 A, RG = 3.0 W

10.6

ns

Rise Time

tr

21.1

Turn−Off Delay Time

td(OFF)

29.3

Fall Time

tf

4.0

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = 30 A

TJ = 25°C

0.88

1.1

V

TJ = 125°C

0.78

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 30 A

39

ns

Charge Time

ta

19

Discharge Time

tb

20

Reverse Recovery Charge

QRR

35

nC

PACKAGE PARASITIC VALUES

Source Inductance

LS

TA = 25°C

0.93

nH

Drain Inductance

LD

0.005

nH

Gate Inductance

LG

1.84

nH

Gate Resistance

RG

1.1

2.0

W

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

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