NTMFS4839NH datasheet(5/7 Pages) ONSEMI

Part #	NTMFS4839NH

Description	Power MOSFET 30 V, 64 A, Single N?묬hannel, SO??FL

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NTMFS4839NH

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5

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2400

15

10

5

0

5

10

15

20

25

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation

CISS

COSS

TJ = 25°C

CRSS

0

1.5

3

4.5

6

7.5

9

10.5

12

0 2

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8 10 121416 1820 222426 28

QGS

VDD = 15 V

VGS = 0 V − 11.5 V

ID = 30 A

TJ = 25°C

QT

Qg, TOTAL GATE CHARGE (nC)

Figure 8. Gate−to−Source and Drain−to−Source

Voltage vs. Total Gate Charge

QGD

1

10

100

1

10

100

tr

td(off)

td(on)

tf

VDS = 15 V

ID = 15 A

VGS = 11.5 V

Figure 9. Resistive Switching Time

Variation versus Gate Resistance

RG, GATE RESISTANCE (W)

0

5

10

15

20

25

30

0.5

0.6

0.7

0.8

0.9

1.0

Figure 10. Diode Forward Voltage versus

Current

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

TJ = 25°C

VGS = 0 V

VGS

VDS

1

10

100

1000

0.1

1

10

100

100 ms

1 ms

10 ms

dc

RDS(on) Limit

Thermal Limit

Package Limit

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

VGS = 20 V

Single Pulse

TC = 25°C

10 ms

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Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

TJ, STARTING JUNCTION TEMPERATURE (°C)

ID = 27 A

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NTMFS4839NH Datasheet(PDF) 5 Page - ON Semiconductor

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