NTMFS4709NT3G datasheet(3/6 Pages) ONSEMI

Part #	NTMFS4709NT3G

Description	Power MOSFET 30 V, 94 A, Single N-Channel, SOIC-8 FL

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Manufacturer	ONSEMI [ON Semiconductor]

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NTMFS4709N

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Unit

Max

Typ

Min

Test Condition

Symbol

SWITCHING CHARACTERISTICS (Note 6)

Turn-On Delay Time

td(ON)

VGS = 11.5 V, VDS = 15 V,

ID = 30 A, RG = 3.0 W

8.5

ns

Rise Time

tr

87

Turn-Off Delay Time

td(OFF)

31.5

Fall Time

tf

8.5

DRAIN-SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = 20 A

TJ = 25°C

0.75

1.0

V

VGS = 0 V,

IS = 50 A

TJ = 25°C

0.85

VGS = 0 V,

IS = 20 A

TJ = 125°C

0.7

Reverse Recovery Time

tRR

VGS = 0 V,

dIS/dt = 100 A/ms,

IS = 25 A

48

ns

Charge Time

ta

23

Discharge Time

tb

25

Reverse Recovery Charge

QRR

55

nC

Package Parasitic Values

Gate Resistance

RG

TA = 25°C

0.65

W

5. Pulse Test: pulse width

"300 ms, duty cycle "2%

6. Switching characteristics are independent of operating junction temperatures.

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