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NTMFS4709NT3G Datasheet(PDF) 3 Page - ON Semiconductor |
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NTMFS4709NT3G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 6 page NTMFS4709N http://onsemi.com 3 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Unit Max Typ Min Test Condition Symbol SWITCHING CHARACTERISTICS (Note 6) Turn-On Delay Time td(ON) VGS = 11.5 V, VDS = 15 V, ID = 30 A, RG = 3.0 W 8.5 ns Rise Time tr 87 Turn-Off Delay Time td(OFF) 31.5 Fall Time tf 8.5 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 20 A TJ = 25°C 0.75 1.0 V VGS = 0 V, IS = 50 A TJ = 25°C 0.85 VGS = 0 V, IS = 20 A TJ = 125°C 0.7 Reverse Recovery Time tRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 25 A 48 ns Charge Time ta 23 Discharge Time tb 25 Reverse Recovery Charge QRR 55 nC Package Parasitic Values Gate Resistance RG TA = 25°C 0.65 W 5. Pulse Test: pulse width "300 ms, duty cycle "2% 6. Switching characteristics are independent of operating junction temperatures. |
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