NTMD6601NR2G datasheet(2/6 Pages) ONSEMI

Part #	NTMD6601NR2G

Description	Power MOSFET 80 V, 2.2 A, Dual N-Channel, SO-8

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Manufacturer	ONSEMI [ON Semiconductor]

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NTMD6601NR2G

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

80

V

Drain-to-Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

99.8

mV/

°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = 80 V

TJ = 25°C

1.0

mA

TJ = 125°C

25

Gate-to-Source Leakage Current

IGSS

VDS = 0 V, VGS = ±15 V

±100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250 mA

1.0

1.9

3.0

V

Negative Threshold Temperature

Coefficient

VGS(TH)/TJ

4.6

mV/

°C

Drain-to-Source On Resistance

RDS(on)

VGS = 10 V

ID = 2.2 A

190

215

m

W

VGS = 5.0 V

ID = 1.0 A

215

245

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

CISS

VGS = 0 V, f = 1.0 MHz, VDS = 25 V

220

400

pF

Output Capacitance

COSS

55

100

Reverse Transfer Capacitance

CRSS

16

30

Total Gate Charge

QG(TOT)

VGS = 5.0 V, VDS = 40 V, ID = 1.0 A

5.0

9.0

nC

Threshold Gate Charge

QG(TH)

0.4

Gate-to-Source Charge

QGS

1.0

Gate-to-Drain Charge

QGD

2.75

Total Gate Charge

QG(TOT)

VGS = 10 V, VDS = 40 V, ID = 1.0 A

9.0

15

nC

SWITCHING CHARACTERISTICS (Note 4)

Turn-On Delay Time

td(ON)

VGS = 4.5 V, VDD = 40 V,

ID = 1.0 A, RG = 27 W

21

35

ns

Rise Time

tr

62

105

Turn-Off Delay Time

td(OFF)

52

85

Fall Time

tf

50

85

Turn-On Delay Time

td(ON)

VGS = 10 V, VDD = 40 V,

ID = 2.5 A, RG = 47 W

15

ns

Rise Time

tr

95

Turn-Off Delay Time

td(OFF)

50

Fall Time

tf

105

BODY - DRAIN DIODE RATINGS (Note 3)

Forward Diode Voltage

VSD

VGS = 0 V

ID = 1.0 A

TJ = 25°C

0.8

1.0

V

TJ = 150°C

0.6

ns

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 1.0 A

44

Charge Time

Ta

21

Discharge Time

Tb

23

Reverse Recovery Time

QRR

43

86

nC

3. Pulse Test: pulse width

v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

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