NTJD4158C datasheet(5/7 Pages) ONSEMI

Part #	NTJD4158C

Description	Small Signal MOSFET 30 V/??0 V, 0.25/??.88 A, Complementary, SC??8

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NTJD4158C

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TYPICAL P−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

−2 V

125°C

0

1

0.75

1.2

0.8

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

0.25

0

0.4

Figure 1. On−Region Characteristics

0

1

1.5

12

0.8

0.7

0.1

0.5

0

3.5

Figure 2. Transfer Characteristics

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

15

100

10

Figure 3. On−Resistance vs. Drain Current and

Temperature

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

01

0.1

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

−ID, DRAIN CURRENT (AMPS)

−50

0

−25

25

1.0

0.8

0.6

0.4

0

50

125

100

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

TJ = 25°C

10000

5

TJ = −55°C

VGS = 0 V

0.3

75

150

TJ = 25°C

ID = −0.88 A

VGS = −4.5 V

25°C

2.0

VGS = −4.5 V

−1 V

020

−1.25 V

−1.5 V

−1.75 V

0.25

0.2

1.6

2

1000

0.25

0.5

0.75

0.15

VGS = −4.5, −3.5 & −2.5 V

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

0.4

1

0.2

−ID, DRAIN CURRENT (AMPS)

0.5

0

VGS = −4.5 V

0.1

0.4

VGS = −2.5 V

0.7

0.9

0.3

0.5

0.9

10

TJ = 125°C

TJ = −55°C

0.5

0.8

0.6

0.2

TJ = 25°C

1.8

1.6

1.4

1.2

TJ = 125°C

TJ = 150°C

2.5

3

0.2

0.3

0.4

0.5

0.6

VDS ≥ −20 V

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