NTJD4152P datasheet(3/5 Pages) ONSEMI

Part #	NTJD4152P

Description	Trench Small Signal MOSFET 20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88

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NTJD4152P

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TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

-2 V

125

°C

0

1

0.75

1.2

0.8

-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

0.25

0

0.4

Figure 1. On-Region Characteristics

0

1

1.5

12

0.8

0.7

0.1

0.5

0

3.5

Figure 2. Transfer Characteristics

-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

15

100

10

Figure 3. On-Resistance vs. Drain Current and

Temperature

-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

01

0.1

Figure 4. On-Resistance vs. Drain Current and

Gate Voltage

-ID, DRAIN CURRENT (AMPS)

-50

0

-25

25

1.0

0.8

0.6

0.4

0

50

125

100

Figure 5. On-Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

TJ = 25°C

10000

5

TJ = -55°C

VGS = 0 V

0.3

75

150

TJ = 25°C

ID = -0.88 A

VGS = -4.5 V

25

°C

2.0

VGS = -4.5 V

-1 V

020

-1.25 V

-1.5 V

-1.75 V

0.25

0.2

1.6

2

1000

0.25

0.5

0.75

0.15

VGS = -4.5, -3.5 & -2.5 V

Figure 6. Drain-to-Source Leakage Current

vs. Voltage

0.4

1

1.0

-ID, DRAIN CURRENT (AMPS)

2.5

0

VGS = -4.5 V

0.5

2.0

VGS = -2.5 V

0.7

0.9

1.5

0.5

0.9

10

TJ = 125°C

TJ = -55°C

0.5

0.8

0.6

0.2

TJ = 25°C

VGS = -1.8 V

1.8

1.6

1.4

1.2

TJ = 125°C

TJ = 150°C

2.5

3

0.2

0.3

0.4

0.5

0.6

VDS ≥ -20 V

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