NTGS5120PT1G datasheet(4/5 Pages) ONSEMI

Part #	NTGS5120PT1G

Description	Power MOSFET ??0 V, ??.9 A, Single P?묬hannel, TSOP??

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NTGS5120P

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TYPICAL CHARACTERISTICS

Crss

Qgd

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source Voltage vs. Total

Charge

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

QG, TOTAL GATE CHARGE (nC)

30

20

10

0

500

600

18

8.0

6.0

2.0 4.0

0

1.0

2.0

4.0

5.0

8.0

9.0

10

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

RG, GATE RESISTANCE (W)

−VSD, SOURCE−TO−DRAIN VOLTAGE (V)

100

10

1.0

10

1000

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

0.2

0.4

0.8

1.0

1.2

40

100

200

300

400

VGS = 0 V

TJ = 25°C

Ciss

Coss

3.0

6.0

Qt

Qgs

TJ = 25°C

ID = −2.9 A

Vds = −30 V

VDD = −30 V

ID = −1.0 A

VGS = −10 V

td(off)

td(on)

tr

tf

0.9

0.8

VGS = 0 V

TJ = 25°C

0.6

1300

100

700

1000

1100

800

900

1200

1.4

7.0

16

14

10

12

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