NTD6600N-1 datasheet(2/6 Pages) ONSEMI

Part #	NTD6600N-1

Description	Power MOSFET 100 V, 12 A, N?묬hannel, Logic Level DPAK

Download	6 Pages

Scroll/Zoom	100%

Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

Logo

2 / 6 page

NTD6600N

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 mAdc)

V(BR)DSS

100

−

Vdc

Zero Gate Voltage Drain Current

(VGS = 0 Vdc, VDS = 100 Vdc, TJ = 25°C)

(VGS = 0 Vdc, VDS = 100 Vdc, TJ = 125°C)

IDSS

−

1.0

10

mAdc

Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IGSS

−

±100

nAdc

ON CHARACTERISTICS

Gate Threshold Voltage

VDS = VGS, ID = 250 mAdc)

Temperature Coefficient (Negative)

VGS(th)

1.0

−

1.5

−4.4

2.0

−

Vdc

mV/

°C

Static Drain−to−Source On−State Resistance (VGS = 5.0 Vdc, ID = 6.0 Adc)

RDS(on)

−

118

146

m

W

Drain−to−Source On−Voltage (VGS = 5.0 Vdc, ID = 12 Adc)

VDS(on)

−

1.5

2.2

Vdc

Forward Transconductance (VDS = 10 Vdc, ID = 6.0 Adc)

gFS

−

10

−

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

−

463

700

pF

Output Capacitance

Coss

−

116

225

Reverse Transfer Capacitance

Crss

−

36

75

SWITCHING CHARACTERISTICS (Notes 4 & 5)

Turn−On Delay Time

(VDD = 80 Vdc, ID = 6.0 Adc,

VGS = 5.0 Vdc, RG = 9.1 W)

td(on)

−

10.5

20

ns

Rise Time

tr

−

75

140

Turn−Off Delay Time

td(off)

−

26

40

Fall Time

tf

−

50

90

Total Gate Charge

(VDS = 80 Vdc, ID = 6.0 Adc,

VGS = 5.0 Vdc)

Qtot

−

11.3

20

nC

Gate−to−Source Charge

Qgs

−

1.9

−

Gate−to−Drain Charge

Qgd

−

7.4

−

BODY−DRAIN DIODE RATINGS (Note 4)

Diode Forward On−Voltage

(IS = 12 Adc, VGS = 0 Vdc)

(IS = 12 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

−

0.90

0.80

1.4

−

Vdc

Reverse Recovery Time

(IS = 12 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/ms)

trr

−

80

−

ns

ta

−

50

−

tb

−

30

−

Reverse Recovery Stored Charge

QRR

−

0.240

−

mC

4. Indicates Pulse Test: P.W. = 300

ms max, Duty Cycle = 2%.

5. Switching characteristics are independent of operating junction temperature.

ORDERING INFORMATION

Device

Package

Shipping†

NTD6600N

DPAK

75 Units/Rail

NTD6600N−1

DPAK−3

NTD6600N−1G

DPAK−3

(Pb−Free)

NTD6600NT4

DPAK

2500 Tape & Reel

NTD6600NT4G

DPAK

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

Similar Part No. - NTD6600N-1

Manufacturer	Part #	Datasheet	Description
Electronic devices inc.	NTD60	35Kb / 2P	HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
ON Semiconductor	NTD600N80S3Z	333Kb / 9P	MOSFET ??Power, N-Channel, SUPERFET III 800 V, 600 m, 8 A December, 2020 ??Rev. 0
	NTD60N02R	81Kb / 8P	Power MOSFET 62 A, 24 V, N-Channel, DPAK December, 2004 ??Rev. 10
	NTD60N02R	85Kb / 8P	Power MOSFET 62 A, 25 V, N?묬hannel, DPAK December, 2006 ??Rev. 12
	NTD60N02R-001	81Kb / 8P	Power MOSFET 62 A, 24 V, N-Channel, DPAK December, 2004 ??Rev. 10

More results

Similar Description - NTD6600N-1

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	NVD3055-094T4G	135Kb / 9P	Power MOSFET 12 A, 60 V, N?묬hannel DPAK / IPAK April, 2013 ??Rev. 8
	NTD3055L104-001	126Kb / 8P	12 Amps, 60 Volts, Logic Level N?묬hannel DPAK June, 2008 ??Rev. 6
	MTP10N10EL	107Kb / 8P	Power MOSFET 10 A, 100 V, Logic Level, N?묬hannel TO??20 March, 2005 ??Rev. 4
	NTD20N06LT4G	128Kb / 8P	Power MOSFET 20 Amps, 60 Volts Logic Level, N?묬hannel DPAK October, 2011 ??Rev. 3
	NTD24N06L	87Kb / 8P	Power MOSFET 24 Amps, 60 Volts Logic Level, N?묬hannel DPAK August, 2005 ??Rev. 2
	MTD20N06HDL	227Kb / 8P	Power MOSFET 20 Amps, 60 Volts, Logic Level N?묬hannel DPAK August, 2006 ??Rev. 6
	NTD4302	118Kb / 7P	Power MOSFET 68 A, 30 V, N?묬hannel DPAK October, 2010 ??Rev. 8
	NTD60N02R-35G	85Kb / 8P	Power MOSFET 62 A, 25 V, N?묬hannel, DPAK December, 2006 ??Rev. 12
	NTD4302T4G	118Kb / 7P	Power MOSFET 68 A, 30 V, N?묬hannel DPAK October, 2010 ??Rev. 8
	NTD5802NT4G	130Kb / 7P	Power MOSFET 40 V, Single N?묬hannel, 101 A DPAK August, 2011 ??Rev. 6

More results

NTD6600N-1 Datasheet(PDF) 2 Page - ON Semiconductor

NTD6600N-1 Datasheet(HTML) 2 Page - ON Semiconductor

Similar Part No. - NTD6600N-1

Similar Description - NTD6600N-1

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL