NTD5865NL datasheet(4/7 Pages) ONSEMI

Part #	NTD5865NL

Description	N-Channel Power MOSFET 60 V, 40 A, 16 m廓

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NTD5865NL

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TYPICAL CHARACTERISTICS

0

200

400

600

800

1000

1200

1400

1600

1800

0

10

2030405060

Figure 7. Capacitance Variation

VDS, DRAIN--TO--SOURCE VOLTAGE (V)

TJ =25C

VGS =0 V

Ciss

Coss

Crss

0

2

4

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10

0

5

10

15

20

25

30

Qgs

QT

Qgd

Figure 8. Gate--to--Source vs. Total Charge

Qg, TOTAL GATE CHARGE (nC)

VDS =48 V

ID =40 A

TJ =25C

1

10

100

1000

1

10

100

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

RG, GATE RESISTANCE (Ω)

VDD =48 V

ID =40 A

VGS =10 V

td(off)

td(on)

tr

tf

0

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40

0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00

Figure 10. Diode Forward Voltage vs. Current

VSD, SOURCE--TO--DRAIN VOLTAGE (V)

TJ =25C

VGS =0 V

0.1

1

10

100

1000

0.1

1

10

100

VDS, DRAIN--TO--SOURCE VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

10 ms

100 ms

1ms

dc

10 ms

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

VGS =10 V

SINGLE PULSE

TC =25C

0

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TJ, STARTING JUNCTION TEMPERATURE

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

ID =27 A

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