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NTD4959NH-1G Datasheet(PDF) 2 Page - ON Semiconductor |
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NTD4959NH-1G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 8 page NTD4959NH http://onsemi.com 2 THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case (Drain) RqJC 2.9 °C/W Junction−to−TAB (Drain) RqJC−TAB 3.5 Junction−to−Ambient − Steady State (Note 1) RqJA 74 Junction−to−Ambient − Steady State (Note 2) RqJA 116 1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ 25 mV/°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 24 V TJ = 25°C 1.0 mA TJ = 125°C 10 Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = "20 V "100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.5 2.1 2.5 V Negative Threshold Temperature Coefficient VGS(TH)/TJ 5.7 mV/°C Drain−to−Source On Resistance RDS(on) VGS = 10 to 11.5 V ID = 30 A 7.0 9.0 mW ID = 15 A 7.0 VGS = 4.5 V ID = 30 A 10.45 12.5 ID = 15 A 9.95 Forward Transconductance gFS VDS = 15 V, ID = 15 A 9.0 S CHARGES AND CAPACITANCES Input Capacitance Ciss VGS = 0 V, f = 1.0 MHz, VDS = 12 V 1596 2155 pF Output Capacitance Coss 331 447 Reverse Transfer Capacitance Crss 190 294 Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 15 V, ID = 30 A 12.5 15 nC Threshold Gate Charge QG(TH) 2.4 3.6 Gate−to−Source Charge QGS 5.3 7.9 Gate−to−Drain Charge QGD 5.1 7.7 Total Gate Charge QG(TOT) VGS = 11.5 V, VDS = 15 V, ID = 30 A 29.3 44 nC SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time td(on) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 12.0 18 ns Rise Time tr 20 30 Turn−Off Delay Time td(off) 14 21 Fall Time tf 5.0 7.5 Turn−On Delay Time td(on) VGS = 11.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 7.0 10.4 ns Rise Time tr 18 27 Turn−Off Delay Time td(off) 22 33 Fall Time tf 3.0 4.6 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. |
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