NTD4815N-1G datasheet(3/8 Pages) ONSEMI

Part #	NTD4815N-1G

Description	Power MOSFET 30 V, 35 A, Single N--Channel, DPAK/IPAK

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NTD4815N

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ELECTRICAL CHARACTERISTICS (TJ =25°C unless otherwise specified)

Parameter

Unit

Max

Typ

Min

Test Condition

Symbol

SWITCHING CHARACTERISTICS (Note 4)

Turn--On Delay Time

td(ON)

VGS =11.5 V, VDS =15 V,

ID =15 A, RG =3.0 Ω

6.3

ns

Rise Time

tr

17.6

Turn--Off Delay Time

td(OFF)

18.4

Fall Time

tf

2.3

DRAIN--SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS =0 V,

IS =30 A

TJ =25°C

1.0

1.2

V

TJ = 125°C

0.92

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS =30 A

15.3

ns

Charge Time

ta

8.7

Discharge Time

tb

6.6

Reverse Recovery Charge

QRR

5.5

nC

PACKAGE PARASITIC VALUES

Source Inductance

LS

TA =25°C

2.49

nH

Drain Inductance, DPAK

LD

0.0164

Drain Inductance, IPAK

LD

1.88

Gate Inductance

LG

3.46

Gate Resistance

RG

2.6

Ω

3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

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