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RJK1053DPB Datasheet(PDF) 4 Page - Renesas Technology Corp |
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RJK1053DPB Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page RJK1053DPB Preliminary R07DS0084EJ0102 Rev.1.02 Page 4 of 6 Jul 30, 2010 Case Temperature Tc (°C) Static Drain to Source on State Resistance vs. Temperature 40 32 24 16 8 –25 0 25 50 75 100 125 150 0 Source to Drain Voltage VSD (V) Reverse Drain Current vs. Source to Drain Voltage Channel Temperature Tch ( °C) Maximum Avalanche Energy vs. Channel Temperature Derating 20 16 12 8 4 25 50 75 100 125 150 0 50 40 30 20 10 0 0.4 0.8 1.2 1.6 2.0 Pulse Test 5 V VGS = 0 V 10 V IAP = 12.5 A VDD = 50 V duty < 0.1 % Rg ≥ 50 Ω Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage 010 50 40 30 20 10000 1000 100 10 VGS = 0 V f = 1 MHz Crss Coss Ciss Gate Charge Qg (nC) Dynamic Input Characteristics 120 160 200 80 40 0 20 16 12 8 4 20 40 60 80 100 0 0 ID = 25 A VDD = 50 V 25 V 10 V VDD = 50 V 25 V 10 V VGS VDS 10 V VGS = 4.5 V Pulse Test ID = 12.5 A |
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