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NTD95N02RT4G Datasheet(PDF) 1 Page - ON Semiconductor |
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NTD95N02RT4G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2006 July, 2006 − Rev. 3 1 Publication Order Number: NTD95N02R/D NTD95N02R Power MOSFET 95 Amps, 24 Volts N−Channel DPAK Features • High Power and Current Handling Capability • Fast Switching Performance • Low RDS(on) to Minimize Conduction Loss • Low Gate Charge to Minimize Switching Losses • Pb−Free Packages are Available Applications • CPU Motherboard Vcore Applications • High Frequency DC−DC Converters • Motor Drives • Bridge Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 24 V Gate−to−Source Voltage VGS ±20 V Thermal Resistance, Junction−to−Case Total Power Dissipation @ TA = 25°C Drain Current – − Continuous @ TA= 25°C, Limited by Package − Continuous @ TA= 25°C, Limited by Wires RqJC PD ID ID 1.45 86 95 32 °C/W W A A Thermal Resistance, Junction−to− Ambient (Note 1) − Total Power Dissipation @ TA = 25°C − Drain Current − Continuous @ TA= 25°C RqJA PD ID 52 2.4 15.8 °C/W W A Thermal Resistance, Junction−to−Ambient (Note 2) − Total Power Dissipation @ TA = 25°C − Drain Current − Continuous @ TA= 25°C RqJA PD ID 100 1.25 12 °C/W W A Operating Junction and Storage Temperature TJ, TSTG −55 to 150 °C Continuous Source Current (Body Diode) IS 45 A Single Pulse Drain−to−Source Avalanche Energy – (VDD = 25 V, VG = 10, IPK = 13 A, L = 1 mH, RG= 25 W) EAS 84 mJ Lead Temperature for Soldering Purposes (1/8 in from case for 10 seconds) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface mounted on FR4 board using the minimum recommended pad size (Cu area = 0.412 in sq). http://onsemi.com D S G V(BR)DSS RDS(ON) TYP ID MAX* 24 V 4.5 m W @ 10 V 95 A 5.9 m W @ 4.5 V *ID MAX in the product summary table is continuous and steady at 25 °C. MARKING DIAGRAMS & PIN ASSIGNMENTS Y = Year WW = Work Week T95N02R = Device Code G = Pb−Free Package See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. ORDERING INFORMATION 1 Gate 3 Source 2 Drain 4 Drain DPAK CASE 369AA (Surface Mount) STYLE 2 1 2 3 4 1 Gate 3 Source 2 Drain 4 Drain DPAK CASE 369D (Straight Lead) STYLE 2 1 2 3 4 |
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