NTD78N03R-1 datasheet(2/8 Pages) ONSEMI

Part #	NTD78N03R-1

Description	Power MOSFET 25 V, 85 A, Single N?묬hannel, DPAK

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NTD78N03R

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THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case (Drain)

RqJC

1.95

°C/W

Junction−to−Ambient − Steady State (Note 3)

RqJA

65

Junction−to−Ambient − Steady State (Note 4)

RqJA

110

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

25

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

10

mV/°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = 20 V

TJ = 25°C

1.5

mA

TJ = 125°C

10

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250 mA

1.0

1.7

3.0

V

Negative Threshold Temperature Coefficient

VGS(TH)/TJ

−5.3

mV/°C

Drain−to−Source On Resistance

RDS(on)

VGS =

10V to 11.5 V

ID = 30 A

5.0

5.8

mW

ID = 15 A

4.9

5.7

VGS = 4.5 V

ID = 30 A

7.5

9.0

ID = 15 A

7.2

8.5

Forward Transconductance

gFS

VDS = 15 V, ID = 10 A

23

S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

Ciss

VGS = 0 V, f = 1.0 MHz,

VDS = 12 V

1794

pF

Output Capacitance

Coss

882

Reverse Transfer Capacitance

Crss

373

Total Gate Charge

QG(TOT)

VGS = 4.5 V, VDS = 20 V,

ID = 20 A

19.4

24

nC

Threshold Gate Charge

QG(TH)

0.8

Gate−to−Source Charge

QGS

2.9

Gate−to−Drain Charge

QGD

12.4

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

td(on)

VGS = 4.5 V, VDS = 20 V,

ID = 20 A, RG = 2.5 W

11

ns

Rise Time

tr

75

Turn−Off Delay Time

td(off)

18

Fall Time

tf

17

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = 30 A

TJ = 25°C

0.8

1.0

V

Reverse Recovery Time

tRR

VGS = 0 V, dIs/dt = 100 A/ms,

IS = 20 A

38

ns

Charge Time

ta

16.5

Discharge Time

tb

22

Reverse Recovery Time

QRR

31

nC

3. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.

4. Surface−mounted on FR4 board using the minimum recommended pad size.

5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

6. Switching characteristics are independent of operating junction temperatures.

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