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NTD70N03R Datasheet(PDF) 2 Page - ON Semiconductor

Part # NTD70N03R
Description  Power MOSFET 72 A, 25 V, N-Channel DPAK
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTD70N03R Datasheet(HTML) 2 Page - ON Semiconductor

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NTD70N03R
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(br)DSS
25
-
28
20.5
-
-
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
-
-
-
-
1.5
10
mAdc
Gate-Body Leakage Current
(VGS = ±20 Vdc, VDS = 0 Vdc)
IGSS
-
-
±100
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
-
1.5
4.0
2.0
-
Vdc
mV/
°C
Static Drain-to-Source On-Resistance (Note 3)
(VGS = 4.5 Vdc, ID = 20 Adc)
(VGS = 10 Vdc, ID = 20 Adc)
RDS(on)
-
-
8.1
5.6
13
8.0
m
W
Forward Transconductance (Note 3)
(VDS = 10 Vdc, ID = 15 Adc)
gFS
-
27
-
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 20 Vdc, VGS = 0 V,
f = 1 MHz)
CISS
-
1333
-
pF
Output Capacitance
COSS
-
600
-
Transfer Capacitance
CRSS
-
218
-
SWITCHING CHARACTERISTICS (Note 4)
Turn-On Delay Time
(VGS = 10 Vdc, VDD = 10 Vdc,
ID = 36 Adc, RG = 3 W)
td(on)
-
6.9
-
ns
Rise Time
tr
-
1.3
-
Turn-Off Delay Time
td(off)
-
18.4
-
Fall Time
tf
-
5.5
-
Gate Charge
(VGS = 5 Vdc, ID = 36 Adc,
VDS = 10 Vdc) (Note 3)
QT
-
13.2
-
nC
QGS
-
3.3
-
QDS
-
6.5
-
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
(IS = 20 Adc, VGS = 0 Vdc) (Note 3)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
-
-
0.86
0.73
1.2
-
Vdc
Reverse Recovery Time
(IS = 36 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 3)
trr
-
27.9
-
ns
ta
-
14.8
-
tb
-
13.1
-
Reverse Recovery Stored
Charge
QRR
-
19
-
nC
3. Pulse Test: Pulse Width = 300
ms, Duty Cycle = 2%.
4. Switching characteristics are independent of operating junction temperatures.


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