NTA4151PT1G datasheet(1/6 Pages) ONSEMI

Part #	NTA4151PT1G

Description	Small Signal MOSFET ??0 V, ??60 mA, Single P?묬hannel, Gate Zener, SC??5, SC??9

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Manufacturer	ONSEMI [ON Semiconductor]

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September, 2006 − Rev. 5

1

Publication Order Number:

NTA4151P/D

NTA4151P, NTE4151P

Small Signal MOSFET

−20 V, −760 mA, Single P−Channel,

Gate Zener, SC−75, SC−89

Features

• Low RDS(on) for Higher Efficiency and Longer Battery Life

• Small Outline Package (1.6 x 1.6 mm)

• SC−75 Standard Gullwing Package

• ESD Protected Gate

• Pb−Free Packages are Available

Applications

• High Side Load Switch

• DC−DC Conversion

• Small Drive Circuits

• Battery Operated Systems such as Cell Phones, PDAs, Digital

Cameras, etc.

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Value

Units

Drain−to−Source Voltage

VDSS

−20

V

Gate−to−Source Voltage

VGS

±6.0

V

Continuous Drain Current

(Note 1)

Steady State

ID

−760

mA

Power Dissipation (Note 1)

SC−75

SC−89

Steady State

PD

301

313

mW

Pulsed Drain Current

tp =10

ms

IDM

±1000

mA

Operating Junction and Storage Temperature

TJ,

TSTG

−55 to

150

°C

Continuous Source Current (Body Diode)

IS

−250

mA

Lead Temperature for Soldering Purposes

(1/8 in from case for 10 s)

TL

260

°C

Gate−to−Source ESD Rating −

(Human Body Model, Method 3015)

ESD

1800

V

THERMAL RESISTANCE RATINGS

Junction−to−Ambient − Steady State (Note 1)

SC−75

SC−89

RqJA

415

400

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq

[1 oz] including traces).

MARKING DIAGRAM

& PIN ASSIGNMENT

http://onsemi.com

xx

= Device Code

M

= Date Code*

G

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

RDS(on) TYP

ID MAX

V(BR)DSS

0.26

W @ −4.5 V

−20 V

0.35

W @ −2.5 V

−760 mA

0.49

W @ −1.8 V

P−Channel MOSFET

G

D

S

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

SC−75 / SOT−416

CASE 463

STYLE 5

2

1

3

Drain

2

Source

SC−89

CASE 463C

2

1

3

xx M

G

1

Gate

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