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NTA4151PT1G Datasheet(PDF) 1 Page - ON Semiconductor |
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NTA4151PT1G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2006 September, 2006 − Rev. 5 1 Publication Order Number: NTA4151P/D NTA4151P, NTE4151P Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89 Features • Low RDS(on) for Higher Efficiency and Longer Battery Life • Small Outline Package (1.6 x 1.6 mm) • SC−75 Standard Gullwing Package • ESD Protected Gate • Pb−Free Packages are Available Applications • High Side Load Switch • DC−DC Conversion • Small Drive Circuits • Battery Operated Systems such as Cell Phones, PDAs, Digital Cameras, etc. MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage VGS ±6.0 V Continuous Drain Current (Note 1) Steady State ID −760 mA Power Dissipation (Note 1) SC−75 SC−89 Steady State PD 301 313 mW Pulsed Drain Current tp =10 ms IDM ±1000 mA Operating Junction and Storage Temperature TJ, TSTG −55 to 150 °C Continuous Source Current (Body Diode) IS −250 mA Lead Temperature for Soldering Purposes (1/8 in from case for 10 s) TL 260 °C Gate−to−Source ESD Rating − (Human Body Model, Method 3015) ESD 1800 V THERMAL RESISTANCE RATINGS Junction−to−Ambient − Steady State (Note 1) SC−75 SC−89 RqJA 415 400 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). MARKING DIAGRAM & PIN ASSIGNMENT http://onsemi.com xx = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. RDS(on) TYP ID MAX V(BR)DSS 0.26 W @ −4.5 V −20 V 0.35 W @ −2.5 V −760 mA 0.49 W @ −1.8 V P−Channel MOSFET G D S See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ORDERING INFORMATION SC−75 / SOT−416 CASE 463 STYLE 5 2 1 3 3 Drain 2 Source SC−89 CASE 463C 2 1 3 xx M G G 1 Gate |
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