NSS40501UW3T2G datasheet(2/5 Pages) ONSEMI

Part #	NSS40501UW3T2G

Description	40 V, 7.0 A, Low VCE(sat) NPN Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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NSS40501UW3T2G

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typical

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(IC = 10 mAdc, IB = 0)

V(BR)CEO

40

-

Vdc

Collector-Base Breakdown Voltage

(IC = 0.1 mAdc, IE = 0)

V(BR)CBO

40

-

Vdc

Emitter-Base Breakdown Voltage

(IE = 0.1 mAdc, IC = 0)

V(BR)EBO

6.0

-

Vdc

Collector Cutoff Current

(VCB = 40 Vdc, IE = 0)

ICBO

-

0.1

mAdc

Emitter Cutoff Current

(VEB = 6.0 Vdc)

IEBO

-

0.1

mAdc

ON CHARACTERISTICS

DC Current Gain (Note 3)

(IC = 10 mA, VCE = 2.0 V)

(IC = 500 mA, VCE = 2.0 V)

(IC = 1.0 A, VCE = 2.0 V)

(IC = 2.0 A, VCE = 2.0 V)

(IC = 3.0 A, VCE = 2.0 V)

hFE

200

180

-

320

305

295

-

Collector-Emitter Saturation Voltage (Note 3)

(IC = 0.1 A, IB = 0.010 A)

(IC = 1.0 A, IB = 0.100 A)

(IC = 1.0 A, IB = 0.010 A)

(IC = 2.0 A, IB = 0.020 A)

(IC = 3.0 A, IB = 0.030 A)

(IC = 4.0 A, IB = 0.400 A)

VCE(sat)

-

0.006

0.038

0.060

0.097

0.130

0.110

0.010

0.045

0.080

0.120

0.160

0.150

V

Base-Emitter Saturation Voltage (Note 3)

(IC = 1.0 A, IB = 0.01 A)

VBE(sat)

-

0.760

0.900

V

Base-Emitter Turn-on Voltage (Note 3)

(IC = 2.0 A, VCE = 2.0 V)

VBE(on)

-

0.730

0.900

V

Cutoff Frequency

(IC = 100 mA, VCE = 5.0 V, f = 100 MHz)

fT

150

-

MHz

Input Capacitance (VEB = 0.5 V, f = 1.0 MHz)

Cibo

-

650

pF

Output Capacitance (VCB = 3.0 V, f = 1.0 MHz)

Cobo

-

70

pF

SWITCHING CHARACTERISTICS

Delay (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)

td

-

90

ns

Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)

tr

-

100

ns

Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)

ts

-

1050

ns

Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)

tf

-

100

ns

3. Pulsed Condition: Pulse Width = 300

msec, Duty Cycle ≤ 2%.

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