NSS20200W6 datasheet(4/5 Pages) ONSEMI

Part #	NSS20200W6

Description	20 V, 3.0 A, Low VCE(sat) PNP Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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NSS20200W6

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TYPICAL CHARACTERISTICS

Figure 7. Saturation Region

Figure 8. Input Capacitance

Ib, BASE CURRENT (A)

Veb, EMITTER BASE VOLTAGE (V)

0.1

0.01

0.001

0.0001

0.00001

0

0.1

0.2

0.4

0.5

0.7

0.9

1.0

6

5

4

3

2

1

0

130

150

190

210

250

270

310

330

Figure 9. Output Capacitance

Vcb, COLLECTOR BASE VOLTAGE (V)

11

10

9

4

3

2

1

0

50

60

70

90

100

120

130

150

0.3

0.6

0.8

10 mA

100 mA

200 mA

500 mA

1 A

2 A

170

230

290

Cibo (pF)

8

7

6

513

12

15

14

80

110

140

Cobo (pF)

Figure 10. Safe Operating Area

VCE, COLLECTOR−EMITTER VOLTAGE (V)

10

0.1

0.01

0.001

0.1

1

10

1

100

0.01

Single Pulse Test @ TA = 25°C

Thermal Limit

100 ms

1 s

10 ms

1 ms

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