SIA517DJ-T1-GE3 datasheet(9/12 Pages) VISHAY

Part #	SIA517DJ-T1-GE3

Description	N- and P-Channel 12-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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9 / 12 page

Document Number: 64832

S09-0861-Rev. A, 18-May-09

www.vishay.com

9

Vishay Siliconix

SiA517DJ

New Product

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Soure-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.1

1

10

100

0.0

0.3

0.6

0.9

1.2

TJ = 150 °C

TJ = 25 °C

VSD -Source-to-Drain Voltage (V)

0.00

0.03

0.06

0.09

0.12

0.15

01

2

3

45

TJ = 25 °C

TJ = 125 °C

ID =3.6 A

VGS -Gate-to-Source Voltage (V)

1000

100

1

0.001

0.01

0.1

10

Pulse (s)

20

10

5

15

0

On-Resistance vs. Gate-to-Source Voltage

Threshold Voltage

Safe Operating Area, Junction-to-Ambient

0.00

0.03

0.06

0.09

0.12

0.15

0

1234

5

VGS - Gate-to-Source Voltage (V)

TJ = 125 °C

TJ = 25 °C

ID =1 A

0.3

0.4

0.5

0.6

0.7

0.8

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

100

1

0.1

1

10

100

0.01

10

0.1

TA = 25 °C

Single Pulse

100 µs

Limited byRDS(on)*

BVDSS Limited

1ms

10 ms

100 ms

1s,10s

DC

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

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SIA517DJ-T1-GE3 Datasheet(PDF) 9 Page - Vishay Siliconix

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