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SIA517DJ-T1-GE3 Datasheet(PDF) 9 Page - Vishay Siliconix |
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SIA517DJ-T1-GE3 Datasheet(HTML) 9 Page - Vishay Siliconix |
9 / 12 page Document Number: 64832 S09-0861-Rev. A, 18-May-09 www.vishay.com 9 Vishay Siliconix SiA517DJ New Product P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Soure-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 TJ = 150 °C TJ = 25 °C VSD -Source-to-Drain Voltage (V) 0.00 0.03 0.06 0.09 0.12 0.15 01 2 3 45 TJ = 25 °C TJ = 125 °C ID =3.6 A VGS -Gate-to-Source Voltage (V) 1000 100 1 0.001 0.01 0.1 10 Pulse (s) 20 10 5 15 0 On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Safe Operating Area, Junction-to-Ambient 0.00 0.03 0.06 0.09 0.12 0.15 0 1234 5 VGS - Gate-to-Source Voltage (V) TJ = 125 °C TJ = 25 °C ID =1 A 0.3 0.4 0.5 0.6 0.7 0.8 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 100 µs Limited byRDS(on)* BVDSS Limited 1ms 10 ms 100 ms 1s,10s DC VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified |
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